Magnetoresistance effect device
AssigneeTDK Corporation
InventorKazuhiko Hayashi
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Abstract
A magnetoresistance effect device having a basic structure wherein a multi-layer film comprising a unit of magnetic layer/non-magnetic layer/magnetic layer/antiferromagnetic layer, or antiferromagnetic layer/magnetic layer/non-magnetic layer/magnetic layer is formed with a protective film on a surface of the magnetoresistance effect device employing one of a metal, oxide material, nitride material, a mixture of oxide and nitride material, a double-layer film of metal/oxide, a double-layer film of metal/nitride, or a double-layer film of metal/(mixture of oxide and nitride) of film thickness between 2 nm and 7 nm.
Claims12
A magnetoresistance effect device comprising:
- a first magnetic layer;
- a non-magnetic layer mounted on the first magnetic layer;
- a second magnetic layer mounted on the non-magnetic layer;
- an antiferromagnetic layer mounted on the second magnetic layer;
- and
- a protective film formed on the antiferromagnetic layer so as to protect the antiferromagnetic layer, wherein the protective film is a multi-layer film that is one of (a) a metal film and an oxide film, (b) a metal film and a nitride film, and (c) a metal film, an oxide film and a nitride film, and having a thickness between 2 nm and 7 nm.
A magnetoresistance effect device comprising:
- a first magnetic layer;
- a non-magnetic layer mounted on the first magnetic layer;
- a second magnetic layer mounted on the non-magnetic layer;
- an antiferromagnetic layer mounted on the second magnetic layer;
- and
- a protective film formed on the antiferromagnetic layer, wherein
- the antiferromagnetic layer comprises at least one of NiMn, IrMn, ReMn, PtMn, CrMn, Ni oxide, Fe oxide, a mixture of Ni oxide and Co oxide, an Ni oxide/Co double layer film, and an Ni oxide/Fe oxide double layer film, and
- the protective film is a multi-layer film that is one of (a) a metal film and an oxide film, (b) a metal film and a nitride film, and (c) a metal film, an oxide film and a nitride film.
A magnetoresistance effect device comprising:
- an antiferromagnetic layer;
- a second magnetic layer mounted on the antiferromagnetic layer;
- a second magnetic layer mounted on the antiferromagnetic layer;
- a non-magnetic layer mounted on the second magnetic layer;
- a first magnetic layer mounted on the non-magnetic layer;
- and
- a protective film formed on the first magnetic layer so as to protect the first magnetic layer, wherein
- the protective film is a multi-layer film that is one of (a) a metal film and an oxide film, (b) a metal film and a nitride film, and (c) a metal film, an oxide film and a nitride film, and having a thickness between 2 nm and 7 nm.
A magnetoresistance effect device comprising:
- an antiferromagnetic layer;
- a second magnetic layer mounted on the antiferromagnetic layer;
- a non-magnetic layer mounted on the second magnetic layer;
- a first magnetic layer mounted on the non-magnetic layer;
- and
- a protective film formed on the first magnetic layer so as to protect the first magnetic layer, wherein
- the antiferromagnetic layer comprises at least one of NiMn, IrMn, PtPdMn, ReMn, ReMn, CrMn, Ni oxide, a mixture of Ni oxide and Co oxide, an Ni oxide/Co oxide double layer film, and an Ni oxide/Fe oxide double layer film, and
- the protective film is a multi-layer film that is one of (a) a metal film and an oxide film, (b) a metal film and a nitride film, and (c) a metal film, an oxide film and a nitride film.
Dependencies are inferred from the claim text.