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US 7,064,881 B2Granted
InP-based phase modulators and methods for making and using same
AssigneeSarnoff Corporation
InventorHooman Mohseni
Life of this patent
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Abstract
A modulator, including: an active modulator layer including a plurality of step quantum wells, wherein at least one of the plurality of step quantum wells is configured to have a leaky electron energy state; and at least one inactive layer bounding the active modulator layer.
Claims18
An electro-refractive modulator, comprising:
- a plurality of step quantum wells;
- and,
- p-doped and n-doped inactive layers bounding said quantum wells;
- wherein, said quantum wells each support an electron wavefunction that becomes larger in size under negative bias of said p-doped inactive layer and positive bias of said n-doped inactive layer.
1 more element
Dependencies are inferred from the claim text.