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US 7,064,615 B2Granted
Method and apparatus for doherty amplifier biasing
AssigneeFreescale Semiconductor, Inc.
InventorsEnver Krvavac, James E. Mitzlaff, Mark I. Van Horn
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Abstract
Apparatus and methods are described for biasing amplifiers with multiple outputs. A semiconductor die may include a reference Field Effect Transistor (FET) integrated on the semiconductor die and coupled to an amplifier integrated on the semiconductor die. A voltage offset circuit may also be integrated on the semiconductor die for determining the voltage needed to operate the amplifier.
Claims14
An amplifier circuit, comprising:
- a semiconductor die;
- a Doherty amplifier integrated on the semiconductor die, the Doherty amplifier including a peaking amplifier and a carrier amplifier coupled to the peaking amplifier;
- a resistor divider network integrated on the semiconductor die and coupled to the carrier amplifier, the resistor divider network biasing the peaking amplifier;
- and
- a self-bias Field Effect Transistor which automatically tracks variations in device parameters of the peaking amplifier integrated on the semiconductor die and coupled to the Doherty amplifier,
- the self-bias Field Effect Transistor and resistor divider network together biasing the Doherty amplifier.
3 more elements
An amplifier circuit, comprising:
- a semiconductor die;
- a first and second amplifiers integrated on the semiconductor die;
- a resistor divider network integrated on the semiconductor for biasing the first amplifier;
- and
- a self-bias Field Effect Transistor which automatically tracks variations in device parameters of the first amplifier integrated on the semiconductor die and coupled to the second amplifier;
- the self-bias Field Effect Transistor and resistor divider network together biasing the second amplifier.
3 more elements
A method, comprising:
- providing a semiconductor die having an amplifier integrated on the semiconductor die, a self-bias Field Effect Transistor integrated on the semiconductor die, and a resistor divider network integrated on the semiconductor die;
- operating the self-bias Field Effect Transistor to track device parameters of the amplifier;
- and
- operating the self-bias Field Effect Transistor and the resistor divider network to bias the amplifier based on tracked changes to the device parameters of the amplifier.
1 more element
A method, comprising:
- providing a semiconductor die comprising
- a first and second amplifier integrated on the semiconductor die;
- a self-bias Field Effect Transistor which automatically tracks variations in device parameters of the first amplifier integrated on the semiconductor die, and
- a the resistor divider network integrated on the semiconductor die;
- operating the self-bias Field Effect Transistor to provide a reference voltage to the second amplifier;
- and
- operating the resistor divider network bias the first amplifier proportional to the reference voltage of the second amplifier.
4 more elements
Dependencies are inferred from the claim text.