IDSS RF amplifier
AssigneeChung-Shan Institute of Science and Technology
InventorsDow-Chih Niu, Chia-Yang Chen
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Abstract
A single-power-supply Idss-bias RF amplifier is disclosed, which is composed by the first and second stages Amplifiers. The two stages have the same circuit topology except matching circuits. The source terminal of amplifier is grounded directly to reduce a parasitic effect from a bias circuit. It will increase the stability of the RF amplifier and avoid an oscillation. The lossy matching circuits and eliminating resonator circuit are designed to make the RF amplifier unconditional stable. A variable resister is put into to adjust a D.C. voltage on the drain terminal. The current of amplifier could be controlled in a reasonable range. High gain and quit low noise have been obtained.
Claims7
A IDSS RF amplifier, comprising:
- a first stage amplifier having a first transistor, comprising the grounded source terminal and the gate terminal grounded through a first choke;
- and
- a second stage amplifier having a second transistor, comprising the grounded source terminal and the gate terminal grounded through a second choke;
- wherein the first and the second stage amplifier have the same topology except matching circuits, the first choke and the second choke do not include bypass capacitors so that the gate terminals of the first transistor and the second transistor are grounded in DC paths, as well as the drain terminal of the first transistor is grounded by series of a fourth resistor and a first capacitor, and further is connected to a first DC power supply through a first resistor and a second RF choke in which a node between the first resistor and the second RF choke is grounded by a second capacitor.
Dependencies are inferred from the claim text.