A self-refresh circuit of a semiconductor memory device including a memory cell array, the self-refresh circuit comprising:
- a counter which is enabled or disabled in response to the refresh control signal and when enabled creates an input pulse signal periodically;
- a pass gate circuit which is enabled or disabled in response to the refresh control signal and when enabled receives and delays the input pulse signal and outputs the delayed input pulse signal;
- as an output pulse signal;
- a self-refresh controller which creates an internal address signal in response to the output pulse signal;
- and
- a self-refresh operation unit, which consecutively enables word lines of the memory cell array in response to the internal address signal and performs the self-refresh operation;
- wherein the pass gate circuit comprises:
- a pass gate unit, which, in response to a switching control signal, delays the input pulse signal for a fixed duration and outputs the delayed input pulse signal as the output pulse signal;
- and
- a pass gate control unit which outputs the switching control signal, wherein, in response to an internal control signal, the pass gate control unit determines the existence of a transition in the input pulse signal, and enables or disables the switching control signal according to the determination.