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US 7,064,476 B2Granted
Emitter
AssigneeMicron Technology, Inc.
InventorDavid A. Cathey
Life of this patent
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Abstract
Electron emitters and a method of fabricating emitters are disclosed, having a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitters and decreases toward the base of the emitters. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitters having impurity gradients.
Claims7
A pixel, comprising:
- a single-layered substrate further comprising:
- at least one protuberance formed into the substrate, the at least one protuberance having an apex;
- and
- an impurity offset from the apex of the at least one protuberance, said impurity within said protuberance having a concentration increasing concurrently with a distance from the apex.
1 more element
A field emission display, comprising:
- a portion of a single-layered substrate, the portion being an uncontaminated single-layered substrate that is at least semiconductive formed from a single-layered substrate;
- and
- a micro-cathode located in a portion of said substrate formed from the portion of the single-layered substrate further comprising:
- an increasingly contaminated body, the concentration of the impurity increasing from a contaminated apex of the micro-cathode.
1 more element
A display panel, comprising:
- a substrate comprising semiconductive material formed from a single-layered substrate;
- and
- an emitter electrode located in a portion of said substrate, further comprising an apex having an etch-resistible quality that decreases with the distance from said apex.
Dependencies are inferred from the claim text.