Semiconductor device and method of manufacturing the same
AssigneeSony Corporation
InventorJunichi Aoyama
Life of this patent
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Abstract
The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.
Claims15
A semiconductor device in which a second conductive layer is connected through a connection pillar, to a first conductive layer embedded in a groove formed in an insulation film, wherein:
- said connection pillar is formed directly on a surface of said first conductive layer and exhibits a crystallographical alignment to the first conductive layer and a mechanical strength effected by being grown from the surface of the first conductive layer without use of any growth guide at a direction of a width of the first conductive layer such that the connection pillar has a width that is self-aligned to the width of the first conductive layer without use of any growth guide,
- said second conductive layer is formed on a surface of the connection pillar opposite the first conductive layer, and,
- the first conductive layer and connection pillar are made of a same metal or a same alloy thereof having a face-centered cubic structures,
- wherein said connection pillar is formed through selective CVD.
A semiconductor device in which a second conductive layer is connected through a connection pillar to a first conductive layer embedded in a groove formed in an insulation film, wherein:
- a growth suppression film formed on said insulation film and said first conductive layer, the growth suppression film having an opening formed through an entire thickness thereof, the opening positioned across a width of the first conductive layer and having a width that is wider than the width of the first conductive layer, and
- said connection pillar is formed directly on a surface of said first conductive layer within said opening of said growth suppression film and exhibits a crystallographical alignment to the first conductive layer and a mechanical strength effected by being grown from the surface of the first conductive layer without use of any growth guide at a direction of the width of the first conductive layer such that the connection pillar has a width that is self-aligned to the width of the first conductive layer without use of any growth guide,
- said second conductive layer is formed on a surface of the connection pillar opposite the first conductive layer, and
- the first conductive layer and connection pillar are made of a same metal or a same alloy thereof having a face-centered cubic structure,
- wherein said connection pillar is formed through selective CVD.
Dependencies are inferred from the claim text.