Semiconductor device having aluminum conductors
AssigneeHitachi, Ltd.
InventorsTomio Iwasaki, Hideo Miura, Takashi Nakajima, Hiroyuki Ohta, Shinji Nishihara, Masashi Sahara
Life of this patent
Estimating the term…
Abstract
There is provided a semiconductor device having high reliability, high yield, and such a interconnection structure as short hardly occurs. The semiconductor device comprises a semiconductor substrate, metal conductors formed on a side of a main face of the substrate which metal conductors contain aluminum as main constituent thereof and copper as an additive element, the metal conductors being made to contain such an element as to suppress the precipitation of copper or being made to have such a film adjacent to the metal conductor as to suppress the precipitation of copper.
Claims10
A semiconductor device comprising a semiconductor substrate, and aluminum conductors formed on a portion of a main face of the substrate which aluminum conductors comprise aluminum as a main constituent thereof, said aluminum conductors containing copper and silicon, wherein the content of silicon contained in said aluminum conductors is not less than 0.05 at. % but not more than 0.4 at. %.
A semiconductor device comprising a semiconductor substrate, and aluminum conductors formed on a portion of a main face of the substrate which aluminum conductors comprise aluminum as a main constituent thereof, a film adjacent to said aluminum conductors, which adjacent film comprises titanium or titanium nitride as a main constituent thereof, said aluminum conductors containing copper and silicon, wherein the content of silicon contained in said aluminum conductors is not less than 0.05 at. % but not more than 0.4 at. %.
A semiconductor device comprising a substrate, an insulating film formed on a portion of a main face of the substrate, and aluminum conductors formed in the insulating film which aluminum conductors comprise aluminum as a main constituent thereof, said aluminum conductors each having at least one area in which conductor spacing is not more than 0.4 μm, a neighboring film formed between said aluminum conductors and said insulating film, which neighboring film comprises as a main constituent thereof at least one material selected from a group consisting of ruthenium, platinum and iridium, said aluminum conductors containing copper, wherein said aluminum conductors contain nickel not less than 0.02 at. % but not more than 1 at. %.
A semiconductor device comprising a substrate, an insulating film formed on a portion of a main face of the substrate, and aluminum conductors formed in the insulating film which aluminum conductors comprise aluminum as a main constituent thereof, said aluminum conductors each having at least one area in which conductor spacing is not more than 0.4 μm, a neighboring film formed between said aluminum conductors and said insulating film, which neighboring film comprises as a main constituent thereof at least one material selected from a group consisting of ruthenium, platinum and iridium, said aluminum conductors containing copper, wherein said aluminum conductors contain silicon not less than 0.05 at. % but not more than 0.4 at. %.
Dependencies are inferred from the claim text.