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US 7,064,436 B2Granted
Semiconductor device and method of fabricating the same
AssigneeFujitsu Limited
InventorsMasahiko Ishiguri, Hirohisa Matsuki, Hiroyuki Yoda, Tadahiro Okamoto, Masamitsu Ikumo, Shuichi Chiba
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate and an array of protruding electrodes arranged at a pitch X1. Each of the protruding electrodes has a height X3 and is formed on a barrier metal base of diameter X2 coupled to an electrode arranged on the semiconductor substrate so as to satisfy the relations (X1/2)≦X2≦(3*X1/4) and (X1/2)≦X3≦(3*X1/4).
Claims2
A semiconductor device comprising:
- a semiconductor substrate;
- and
- an array of protruding electrodes arranged at a pitch X1, each of the protruding electrodes having a height X3 and being formed on a barrier metal base of diameter X2 coupled to an electrode arranged on the semiconductor substrate so as to satisfy the relations
- (X1/2)≦X2≦(3*X1/4)
- and
- (X1/2)≦X3≦(3*X1/4).
3 more elements
Dependencies are inferred from the claim text.