Fin-type resistors
AssigneeInternational Business Machines Corporation
InventorsDavid M. Fried, Edward J. Nowak
Life of this patent
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Abstract
A method of forming a Fin structure including a resistor present in the thin vertically oriented semiconductor body is provided. The method includes the steps of forming at least one vertically-oriented semiconductor body having exposed vertical surfaces on a substrate; implanting dopant ions into the exposed vertical surfaces of the at least one semiconductor body off-axis at a concentration and energy sufficient to penetrate into the exposed vertical surfaces of the at least one semiconductor body without saturation; and forming contacts to the at least one semiconductor body. The present invention is directed to a Fin structure which includes a resistor present within the thin vertically oriented semiconductor body.
Claims11
A Fin structure comprising:
- a structure having at least one vertically oriented semiconductor body present thereon, wherein said at least one vertically oriented semiconductor body has vertical surfaces;
- a doped region, comprised of a concentration of dopant ions, present in said at least one vertically oriented semiconductor body that extends inward from said vertical surfaces, wherein said dopant ions are diffused into said semiconductor body to a predetermined depth that is dependent on the thickness of the semiconductor body and the concentration of the dopant ions;
- and
- contacts present on outer portions of said at least one vertically oriented semiconductor body, wherein said doping region and said contacts are of the same dopant type thereby providing a resistor in said at least one vertically oriented semiconductor body.
A Fin structure comprising:
- a structure having at least one vertically oriented semiconductor body present thereon, wherein said at least one vertically oriented semiconductor body has vertical surfaces;
- a doped region, comprised of a concentration of dopant ions, present in said at least one vertically oriented semiconductor body that extends inward from said vertical surfaces, wherein said dopant ions are diffused into said semiconductor body to a predetermined depth that is dependent on the thickness of the semiconductor body and the concentration of the dopant ions;
- and
- contacts present on outer portions of said at least one vertically oriented semiconductor body, wherein said doping region and one of said contacts are of opposite dopant type thereby providing a diode in said at least one vertically oriented semiconductor body.
Dependencies are inferred from the claim text.