Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsTakuma Hara, Mitsuhiko Kitagawa
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprises: a first main electrode; a second main electrode; a semiconductor base region of a first conductivity type; a gate electrode provided in a trench through an insulating film, the trench being formed to penetrate the semiconductor base region; and a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type provided under the semiconductor base region. A flow of a current between the first and second main electrodes when a voltage of a predetermined direction is applied between these electrodes is controllable in accordance with a voltage applied to the gate electrode. A depleted region extends from a junction between the first and the second semiconductor regions reaching the trench.
Claims16
A semiconductor device comprising:
- a first main electrode;
- a second main electrode;
- a semiconductor base region of a first conductivity type;
- a gate electrode provided in a trench through an insulating film, the trench being formed to penetrate the semiconductor base region;
- and
- a first semiconductor region of a second conductivity type provided under the semiconductor base region, a second semiconductor region of a first conductivity type provided under the first semiconductor region, a third semiconductor region of a second conductivity type provided under the second semiconductor region, and a fourth semiconductor region of a second conductivity type provided on the semiconductor base region,
- the first main electrode being provided on the fourth semiconductor region and the second main electrode being provided under the third semiconductor region,
- a flow of a current between the first and second main electrodes when a voltage of a predetermined direction is applied between these electrodes being controllable in accordance with a voltage applied to the gate electrode, and
- a depleted region extending from a junction between the first and the second semiconductor regions reaching the trench,
- wherein a bottom of the trench is provided within the second semiconductor region.
A semiconductor device comprising:
- a first semiconductor region of a second conductivity type;
- a second semiconductor region of a first conductivity type provided on the first semiconductor region,
- a third semiconductor region of a second conductivity type provided on the second semiconductor region,
- a fourth semiconductor region of a first conductivity type provided on the third semiconductor region,
- a fifth semiconductor region of a second conductivity type provided on the fourth semiconductor region,
- a trench penetrating at least the third through fifth semiconductor regions, a bottom of the trench being provided between an upper surface and a lower surface of the second semiconductor region;
- a sixth semiconductor region of a second conductivity type provided in contact with the bottom of the trench;
- and
- a gate electrode provided in the trench through an insulating film.
A semiconductor device comprising:
- a first semiconductor region of a second conductivity type;
- a semiconductor layer provided on the first semiconductor region and having a plurality of second semiconductor regions of a first conductivity type and a plurality of third semiconductor regions of a second conductivity type, the second and the third semiconductor regions being arranged alternately;
- a fourth semiconductor region of a first conductivity type provided on the semiconductor layer,
- a fifth semiconductor region of a second conductivity type provided on the fourth semiconductor region,
- a trench penetrating at least the fourth and the fifth semiconductor regions, a bottom of the trench being provided within the semiconductor layer;
- and
- a gate electrode provided in the trench through an insulating film,
- wherein carrier concentrations of the second and the third semiconductor regions are equal to or less than 5×1015/cm3, and
- the trench is in contact with the second semiconductor region and the third semiconductor region.
A semiconductor device comprising:
- a first semiconductor region of a second conductivity type;
- a semiconductor layer provided on the first semiconductor region and having a plurality of second semiconductor regions of a first conductivity type and a plurality of third semiconductor regions of a second conductivity type, the second and the third semiconductor regions being arranged alternately along with two diagonal directions on the first semiconductor region;
- a fourth semiconductor region of a first conductivity type provided on the semiconductor layer,
- a fifth semiconductor region of a second conductivity type provided on the fourth semiconductor region,
- a trench penetrating at least the fourth and the fifth semiconductor regions, a bottom of the trench being provided within the semiconductor layer;
- and
- a gate electrode provided in the trench through an insulating film,
- the trench being in contact with the second semiconductor region and the third semiconductor region.
Dependencies are inferred from the claim text.