Nonvolatile memory and nonvolatile memory manufacturing method
AssigneesNEC Electronics Corporation, NEC Corporation
InventorsNoriaki Kodama, Kohji Kanamori, Junichi Suzuki, Teiichirou Nishizaka, Yasuhide Den, Shinji Fujieda, Akio Toda
Life of this patent
Estimating the term…
Abstract
A nonvolatile memory device includes source and drain regions formed in a semiconductor substrate, and an insulating film formed on a channel region between the source region and the drain region in the semiconductor substrate. The nonvolatile memory device also includes a dielectric film formed above the channel region to store electric charge, and a control gate formed on the dielectric film. Compressive stress in the channel region is equal to or less than 50 MPa.
Claims20
A nonvolatile memory device comprising:
- source and drain regions formed in a semiconductor substrate;
- an insulating film formed on a channel region between said source region and said drain region in said semiconductor substrate;
- a dielectric film formed above said channel region to store electric charge;
- and
- a control gate formed on said dielectric film,
- wherein compressive stress in said channel region is equal to or less than 50 MPa.
A nonvolatile memory device comprising:
- source and drain regions formed in a semiconductor substrate;
- an insulating film formed on a channel region between said source region and said drain region in said semiconductor substrate;
- a storage node formed above said channel region to store electric charge;
- and
- a control gate formed on said dielectric film,
- wherein compressive stress in said channel region is equal to or less than 50 Mpa.
Dependencies are inferred from the claim text.