Nonvolatile semiconductor memory device

A nonvolatile semiconductor memory device comprising:

• a memory cell including a floating gate formed on a semiconductor substrate via a first gate insulation film, a pair of diffusion layers which are source or drain regions positioned on the opposite sides of the floating gate and formed in the substrate, first and second control gates formed on the opposite sides of the floating gate to drive the floating gate, and an inter-gate insulation film formed between at least the first and second control gates and the floating gate;
• and
• a selection transistor for selecting the memory cell, including a selection gate formed on the substrate via a second gate insulation film, and a pair of second diffusion layers which are formed in the substrate positioned on the opposite sides of the selection gate and one of which is electrically connected to one of the pair of first diffusion layers and which are source or drain regions.