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US 7,064,378 B2Granted
Local-length nitride SONOS device having self-aligned ONO structure and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHee-Seog Jeon, Seung-Beom Yoon, Yong-Tae Kim
Life of this patent
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Abstract
In a local-length nitride SONOS device and a method for forming the same, a local-length nitride floating gate structure is provided for mitigating or preventing lateral electron migration in the nitride floating gate. The structure includes a thin gate oxide, which leads to devices having a lower threshold voltage. In addition, the local-length nitride layer is self-aligned, which prevents nitride misalignment, and therefore leads to reduced threshold voltage variation among the devices.
Claims27
A semiconductor device comprising:
- a semiconductor substrate;
- first and second spaced apart junction regions provided in the semiconductor substrate;
- a first dielectric layer on the semiconductor substrate between the first and second junction regions;
- a second dielectric layer on a first portion of the first dielectric layer;
- a conductor having a body portion formed on a second portion of the first dielectric layer, and having a lateral extension portion above the second dielectric layer, the lateral extension extending from a first side wall of the body portion below a top of the first side wall, wherein a top surface of the lateral extension is below a top surface of the body portion, the body portion and the lateral extension portion being spaced apart from the second dielectric layer.
2 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- first and second spaced apart junction regions provided in the semiconductor substrate;
- a first dielectric layer on the semiconductor substrate between the first and second junction regions;
- a second dielectric layer on a first portion of the first dielectric layer;
- a conductor having a body portion formed on a second portion of the first dielectric layer, and having a lateral extension portion above the second dielectric layer, the lateral extension extending from a first side wall of the body portion below a top of the first side wall, the body portion and the lateral extension portion being spaced apart from the second dielectric layer, wherein the body portion of the conductor has a second outer side wall opposite the first side wall that is curved.
2 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- first and second spaced apart junction regions provided in the semiconductor substrate;
- a first dielectric layer on the semiconductor substrate between the first and second junction regions;
- a second dielectric layer on a first portion of the first dielectric layer;
- a conductor having a body portion formed on a second portion of the first dielectric layer, and having a lateral extension portion above the second dielectric layer, the lateral extension extending from a first side wall of the body portion below a top of the first side wall, the body portion and the lateral extension portion being spaced apart from the second dielectric layer, wherein the second dielectric layer encompasses the lateral extension portion of the conductor.
2 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- first and second spaced apart junction regions provided in the semiconductor substrate;
- a first dielectric layer on the semiconductor substrate between the first and second junction regions;
- a second dielectric layer on a first portion of the first dielectric layer;
- a conductor having a body portion formed on a second portion of the first dielectric layer, and having a lateral extension portion above the second dielectric layer, the lateral extension extending from a first side wall of the body portion below a top of the first side wall, the body portion and the lateral extension portion being spaced apart from the second dielectric layer, wherein the second dielectric layer extends along a portion of the bottom of the lateral extension portion of the conductor, a side of the lateral extension portion of the conductor, and a portion of a top of the lateral extension portion of the conductor.
2 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- first and second spaced apart junction regions provided in the semiconductor substrate;
- a first dielectric layer on the semiconductor substrate between the first and second junction regions;
- a second dielectric layer on a first portion of the first dielectric layer;
- a conductor having a body portion formed on a second portion of the first dielectric layer, and having a lateral extension portion above the second dielectric layer, the lateral extension extending from a first side wall of the body portion below a top of the first side wall, the body portion and the lateral extension portion being spaced apart from the second dielectric layer, wherein the lateral extension extends from a lower region of the side wall.
2 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- first and second spaced apart junction regions provided in the semiconductor substrate;
- a first dielectric layer on the semiconductor substrate between the first and second junction regions;
- a second dielectric layer on a first portion of the first dielectric layer;
- a conductor having a body portion formed on a second portion of the first dielectric layer, and having a lateral extension portion above the second dielectric layer, the lateral extension extending from a first side wall of the body portion below a top of the first side wall, the body portion and the lateral extension portion being spaced apart from the second dielectric layer, wherein the first junction region comprises one of a drain and source region and wherein the second junction region comprises the other of the drain and source regions.
2 more elements
Dependencies are inferred from the claim text.