Method for manufacturing a semiconductor device including a PIP capacitor and a MOS transistor

A method for fabricating a semiconductor device including a polysilicon insulator polysilicon (PIP) capacitor and a metal oxide semiconductor (MOS)transistor, comprising the steps of:

• forming an isolator film on a semiconductor substrate;
• etching the isolator film to expose an active region of the semiconductor substrate;
• forming a silicon film on the exposed active region;
• sequentially depositing a first polysilicon film, a dielectric film and a second polysilicon film on an entire surface of the etched isolator film and the silicon film;
• forming an upper electrode of the capacitor on the etched isolator film in the second polysilicon film;
• and
• forming a lower electrode of the capacitor and a gate electrode in the first polysilicon film on the etched isolator film and the silicon film, respectively,
• wherein the distance between a top surface of the substrate and a top surface of the silicon film is substantially identical to the distance between the top surface of the substrate and a top surface of the lower electrode of the capacitor.

A semiconductor device comprising a polysilicon insulator polysilicon (PIP) capacitor and a metal oxide semiconductor (MOS) transistor fabricated according to a method comprising:

• forming an isolator film on a semiconductor substrate;
• etching the isolator film to expose an active region of the semiconductor substrate;
• forming a silicon film on the exposed active region;
• sequentially depositing a first polysilicon film, a dielectric film and a second polysilicon film on an entire surface of the etched isolator film and the silicon film;
• forming an upper electrode of the capacitor on the etched isolator film in the second polysilicon film;
• and
• forming a lower electrode of the capacitor and a gate electrode of the transistor in the first polysilicon film on the etched isolator film and the silicon film, respectively,
• wherein the distance between a top surface of the substrate and a top surface of the silicon film is substantially identical to the distance between the top surface of the substrate and a top surface of the lower electrode of the capacitor.