Ferroelectric capacitors including a seed conductive film
AssigneeSamsung Electronics Co., Ltd.
InventorsHyeong-Geun An, Sang-Woo Lee, Hyoung-Joon Kim
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Abstract
Ferroelectric capacitors include a support insulating film on an integrated circuit substrate and having a trench therein. A lower electrode is on sidewalls and a bottom surface of the trench. A seed conductive film covers the lower electrode. A ferroelectric film is provided on the support insulating film and the seed conductive film and an upper electrode is provided on the ferroelectric film. The lower electrode may fill the trench and the ferroelectric film may extend over all of the seed conductive film and the support insulating film adjacent the seed conductive film.
Claims15
A ferroelectric capacitor comprising:
- a support insulating film on an integrated circuit substrate and having a trench therein;
- a lower electrode on sidewalls and a bottom surface of the trench;
- a seed conductive film on the lower electrode and extending on the support insulating film beyond the lower electrode and contacting the support insulating film;
- a ferroelectric film on the support insulating film and the seed conductive film;
- and
- an upper electrode on the ferroelectric film.
A ferroelectric capacitor comprising:
- a support insulating film on an integrated circuit substrate and having a trench therein;
- a lower electrode on sidewalls and a bottom surface of the trench;
- a seed conductive film covering the lower electrode;
- a ferroelectric film on the support insulating film and the seed conductive film;
- and
- an upper electrode on the ferroelectric film;
- wherein the lower electrode comprises a multilayer structure including a lower noble metal layer and an upper noble metal layer with a conductive oxide layer of the lower noble metal therebetween and wherein the lower noble metal layer and the conductive oxide layer are conformal to the sidewalls and the bottom surface of the trench and the upper noble metal layer fills portions of the trench not filled by the lower noble metal layer and the conductive oxide layer.
A ferroelectric capacitor comprising:
- a support insulating film on an integrated circuit substrate and having a trench therein;
- a lower electrode on sidewalls and a bottom surface of the trench and having an upper portion extending from the trench to a height relative to the integrated circuit substrate greater than a height of the support insulating film;
- a seed conductive film covering the upper portion of the lower electrode extending from the trench including covering a sidewall portion of the upper portion of the lower electrode extending from the trench;
- a ferroelectric film on the support insulating film and the seed conductive film;
- and
- an upper electrode on the ferroelectric film.
Dependencies are inferred from the claim text.