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US 7,064,359 B2Granted
Switching semiconductor device and switching circuit
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsHidetoshi Ishida, Tsuyoshi Tanaka, Daisuke Ueda
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Abstract
A switching semiconductor device includes a first compound layer formed on a single crystal substrate which includes silicon carbide or sapphire, and including a general formula InxGa1-xN, where 0≦x≦1; a second compound layer formed on the first compound layer, and including a general formula InyALzGa1-y-zN, where 0≦y≦1 and 0<z≦1; and a gate electrode formed on the second compound layer. The gate electrode is electrically connected to a resistance element formed on a first interlayer insulating film that covers the gate electrode, through a metal wiring formed on a second interlayer insulating film that covers the first interlayer insulating film.
Claims24
A switching semiconductor device, comprising:
- a first compound layer formed on a substrate, and consisting of a general formula InxGa1-xN, where 0≦x≦1;
- a second compound layer formed on said first compound layer, and consisting of a general formula InyAlzGa1-y-zN, where 0≦y≦1 and 0<z≦1;
- a gate electrode formed on said second compound layer;
- and
- a resistor connected to said gate electrode,
- wherein a control voltage is applied to said gate electrode through said resistor.
3 more elements
A switching semiconductor device, comprising:
- a first compound layer formed on a substrate, and consisting of a general formula InxGa1-xN, where 0≦x≦1;
- a second compound layer formed on said first compound layer, and consisting of a general formula InyAlzGa1-y-zN, where 0≦y≦1 and 0<z≦1;
- a gate electrode formed on said second compound layer;
- a resistor connected to said gate electrode;
- and
- a third compound layer formed between said substrate and said first compound layer, and consisting of a general formula AluGa1-uN, where 0<u≦1.
3 more elements
A switching semiconductor device, comprising:
- a first compound layer formed on a substrate, and consisting of a general formula InxGa1-xN, where 0≦x≦1;
- a second compound layer formed on said first compound layer, and consisting of a general formula InyAlzGa1-y-zN, where 0≦y≦1 and 0<z≦1;
- a gate electrode formed on said second compound layer;
- and
- a resistor connected to said gate electrode,
- wherein said substrate consists of silicon carbide, sapphire, silicon, or aluminum nitride.
3 more elements
A switching semiconductor device, comprising:
- a first compound layer formed on a substrate, and consisting of a general formula InxGa1-xN, where 0≦x≦1;
- a second compound layer formed on said first compound layer, and consisting of a general formula InyAlzGa1-y-zN, where 0≦y≦1 and 0<z≦1;
- a gate electrode formed on said second compound layer;
- a resistor connected to said gate electrode;
- and
- an ohmic electrode formed on said second compound layer,
- wherein a region of said second compound layer below said ohmic electrode is doped with n-type impurities.
4 more elements
A switching semiconductor device, comprising:
- a first compound layer formed on a substrate, and consisting of a general formula InxGa1-xN, where 0≦x≦1;
- a second compound layer formed on said first compound layer, and consisting of a general formula InyAlzGa1-y-zN, where 0≦y≦1 and 0<z≦1;
- a gate electrode formed on said second compound layer;
- a resistor connected to said gate electrode;
- and
- an ohmic electrode formed on said second compound layer,
- wherein an interface between said second compound layer and said ohmic electrode and neighborhoods of the interface are doped with n-type impurities.
4 more elements
A switching semiconductor device, comprising:
- a first compound layer formed on a substrate, and consisting of a general formula InxGa1-xN, where 0≦x≦1;
- a second compound layer formed on said first compound layer, and consisting of a general formula InyAlzGa1-y-zN, where 0≦y≦1 and 0<z≦1;
- a gate electrode formed on said second compound layer;
- and
- a resistor connected to said gate electrode,
- wherein if it is assumed that a gate width of said gate electrode is Wg, a drain-source capacitance per unit gate width of said gate electrode during channel cutoff is Coff, a maximum drain current per unit gate width is Imax, a breakdown voltage is Vb, a characteristic impedance of a system is Z0, and an operating frequency is f, the gate width Wg satisfies a relationship represented by:
- Vb/(Imax·Z0)≦Wg≦1/(2π·f·Coff·Z0).
4 more elements
A switching semiconductor device, comprising:
- a first compound layer formed on a substrate, and consisting of a general formula InxGa1-xN, where 0≦x≦1;
- a second compound layer formed on said first compound layer, and consisting of a general formula InyAlzGa1-y-zN, where 0≦y≦1 and 0<z≦1;
- a gate electrode formed on said second compound layer;
- and
- a resistor connected to said gate electrode,
- wherein said gate electrode is composed of a single gate electrode, and
- the switching semiconductor device further comprises a booster circuit which applies a boosted voltage, obtained by boosting a power supply voltage, to said gate electrode.
4 more elements
A switching semiconductor device, comprising:
- a first compound layer formed on a substrate, and consisting of a general formula InxGa1-xN, where 0≦x≦1;
- a second compound layer formed on said first compound layer, and consisting of a general formula InyAlzGa1-y-zN, where 0≦y≦1 and 0<z≦1;
- a gate electrode formed on said second compound layer;
- and
- a resistor connected to said gate electrode,
- wherein a gate insulating film is formed between said gate electrode and said second compound layer.
3 more elements
A switching circuit comprising:
- a first transistor connected in series between an input terminal and an output terminal;
- and
- a second transistor shunt-connected to said first transistor,
- wherein said first transistor and said second transistor are formed on a same substrate, each of said first transistor and said second transistor comprises:
- a first compound layer formed on a substrate, and consisting of a general formula InxGa1-xN, where 0≦x≦1;
- a second compound layer formed on said first compound layer, and consisting of a general formula InyAlzGa1-y-zN, where 0≦y≦1 and 0<z≦1;
- a gate electrode formed on said second compound layer;
- and
- a resistor connected to said gate electrode.
6 more elements
Dependencies are inferred from the claim text.