Nitride compound semiconductor light emitting device and method for producing the same
AssigneeSharp Kabushiki Kaisha
InventorsYoshihiro Ueta, Takayuki Yuasa, Atsushi Ogawa, Yuhzoh Tsuda, Masahiro Araki
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Abstract
A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a <0001> direction by an angle which is equal to or greater than about 0.05° and which is equal to or less than about 2°, and a semiconductor multilayer structure formed on the GaN substrate, wherein the semiconductor multilayer structure includes: an acceptor doping layer containing a nitride compound semiconductor; and an active layer including a light emitting region.
Claims10
A nitride compound semiconductor light emitting device comprising:
- a GaN substrate having a (0001) plane whose crystal orientation is tilted away from a <0001> direction in a <11-20> or <1-100> direction by an angle which is equal to or greater than 0.05° and which is less than 2°, and
- a n-type layer containing a nitride compound semiconductor located above the GaN substrate, and
- an active layer containing a nitride compound semiconductor located above the GaN substrate, and
- an acceptor doping layer containing a nitride compound semiconductor comprising GaxInyAl1−(x+y)N (where 0≦x≦1;
- 0≦y≦1;
- and 0≦x+y≦1) located above the GaN substrate,
- wherein the GaN substrate and the active layer are formed so as to be apart from each other by a distance which is equal to or greater than about 1 μm.
A nitride compound semiconductor light emitting device comprising:
- a GaN substrate having a (0001) plane whose crystal orientation is tilted away from a <0001> direction in a <11-20> or <1-100> direction by an angle which is equal to or greater than 0.05° and which is less than 2°, and
- a n-type layer containing a nitride compound semiconductor located above the GaN substrate, and
- an active layer containing a nitride compound semiconductor located above the GaN substrate, and
- an acceptor doping layer containing a nitride compound semiconductor comprising GaxInyAl1−(x+y)N (where 0≦x≦1;
- 0≦y≦1;
- and 0≦x+y≦1) located above the GaN substrate, wherein the acceptor doping layer exhibits a p-type conductivity as grown.
Dependencies are inferred from the claim text.