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US 7,064,345 B2Granted
Organic field effect transistor with off-set threshold voltage and the use thereof
AssigneeSiemens Aktiengesellschaft
InventorsWalter Fix, Andreas Ullmann
Life of this patent
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Abstract
The invention relates to an organic field effect transistor with off-set threshold voltage. Said OFET has an intermediate layer that defines a space charge region between the insulator and the semiconductor.
Claims14
An OFET, having a threshold voltage, comprising:
- a substrate;
- an active semiconductor layer;
- and
- an intermediate layer adjacent to the active semiconductive layer, which intermediate layer offsets the threshold voltage of the OFET by defining a space charge region in the active layer.
1 more element
Dependencies are inferred from the claim text.