Stacked photovoltaic device
AssigneeCanon Kabushiki Kaisha
InventorsMasafumi Sano, Tetsuro Nakamura
Life of this patent
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Abstract
A stacked photovoltaic device comprises at least three p-i-n junction constituent devices superposed in layers, each having a p-type layer, an i-type layer and an n-type layer which are formed of silicon non-single crystal semiconductors. An amorphous silicon layer is used as the i-type layer of a first p-i-n junction, a microcrystalline silicon layer is used as the i-type layer of a second p-i-n junction and a microcrystalline silicon layer is used as the i-type layer of a third p-i-n junction, the first to third layers being in order from the light incident side. In this way, a stacked photovoltaic device can be provided which is practical and low-cost and yet has high reliability and high photoelectric conversion efficiency.
Claims8
A stacked photovoltaic device comprising at least three p-i-n junction constituent devices superposed in layers, each having a p-type layer, an i-type layer and an n-type layer which are formed of non-single crystal semiconductors comprising silicon,
- wherein the i-type layer of a first p-i-n junction comprises a material selected from the group consisting of a-Si:H, a-Si:F and a-Si:H:F;
- wherein the i-type layer of a second p-i-n junction comprises a material selected from the group consisting of μc-Si:H, μc-Si:F and μc-Si:H:F;
- and
- wherein the i-type layer of a third p-i-n junction comprises a material selected from the group consisting of μc-Si:H, μc-Si:F and μc-Si:H:F and has a thickness of from 1.5 μm to 3.5 μm.
A stacked photovoltaic device comprising at least three p-i-n junction constituent devices superposed in layers, each having a p-type layer, an i-type layer and an n-type layer which are formed of non-single crystal semiconductors comprising silicon,
- wherein the i-type layer of a first p-i-n junction comprises a material selected from the group consisting of a-Si:H, a-Si:F and a-Si:H:F;
- wherein the i-type layer of a second p-i-n junction comprises a material selected from the group consisting of μc-Si:H, μc-Si:F and μc-Si:H:F and has a thickness of from 0.5 μm to 1.5 μm;
- and
- wherein the i-type layer of a third p-i-n junction comprises a material selected from the group consisting of μc-Si:H, μc-Si:F and μc-Si:H:F.
Dependencies are inferred from the claim text.