Organometallic complexes and their use as precursors to deposit metal films
AssigneeAir Products and Chemicals, Inc.
InventorsXinjian Lei, Manchao Xiao, Hareesh Thridandam, Kirk Scott Cuthill
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Abstract
This invention is related to organometallic precursors and deposition processes for fabricating conformal metal containing films on substrates such as silicon, metal nitrides and other metal layers. The organometallic precursors are N,N′-alkyl-1,1-alkylsilylamino metal complexes represented by the formula: wherein M is a metal selected from Group VIIb, VIII, IX and X, and specific examples include cobalt, iron, nickel, manganese, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium, and the R1-5 can be same or different selected from hydrogen, alkyl, alkoxy, fluoroalkyl and alkoxy, cycloaliphatic, and aryl.
Claims20
An organometallic complex represented by the structure:
- wherein M is a metal selected from the group consisting of Group VIIb, VIII, IX and X, and R1-5 can be same or different selected from the group consisting of hydrogen, alkyl, alkoxy, fluoroalkyl, fluoroalkoxy, cycloaliphatic, and aryl.
A method of forming an organometallic complex having the structure:
- which comprises:
- reacting a metal halide of the formula MX2 wherein M is a metal selected from the group consisting of Group VIIb, VIII, IX and X, and X is Cl or Br with two equivalents of a silyl compound of the formula, R1R2Si(LiNR3)(NR4R5) wherein R1-5 can be the same or different and selected from the group consisting of hydrogen, alkyl, alkoxy, fluoroalkyl and alkoxy, cycloaliphatic, and aryl.
Dependencies are inferred from the claim text.