Methods for forming pin alloy-semiconductor devices with rectifying junction contacts

A method for forming a rectifying junction on an alloy-semiconductor material, the method comprising the steps of:

• providing the alloy-semiconductor material having at least a first element and a second element, wherein the alloy-semiconductor has a first region and a second region substantially separated by an intermediate region;
• substantially removing the first element from the first region, wherein the removal of the first element from the first region substantially forms a region of substantially enriched material of the second element, and wherein the removal of the first element from the first region substantially forms a negatively doped material in the first region to act as an N-type region;
• substantially removing the second element of the second region, wherein the removal of the second element of the second region forms a positively doped material in the second region to act as a P-type region;
• and
• providing a contact on the P-type region, wherein the N-type region, the intermediate region and the P-type region with the contact substantially form a P-I-N rectifying junction.

A method for forming a rectifying junction on an alloy-semiconductor, the method comprising the steps of:

• applying an N-type material on a first region of the alloy-semiconductor;
• heating the N-type material on the alloy-semiconductor;
• photo-electrochemical etching the N-type material;
• substantially covering the N-type material for protection;
• chemically etching a second region of the alloy-semiconductor to form P-type material;
• and
• applying a contact to the P-type material to form a P-I-N rectifying junction.