Semiconductor processing method using photoresist and an antireflective coating

A semiconductor processing method, comprising:

• forming an antireflective coating comprising at least 30 atomic percent Ge and at least 50 atomic percent Se over a substrate to be patterned;
• forming photoresist over the antireflective coating, the photoresist being different from the antireflective coating;
• exposing the photoresist to actinic radiation effective to pattern the photoresist to form photoresist patterns over the antireflective coating, the antireflective coating reducing reflection of actinic radiation during the exposing than would otherwise occur under identical conditions in the absence of the antireflective coating;
• after the exposing, patterning the substrate through openings in the photoresist and the antireflective coating using the photoresist patterns and the antireflective coating as a mask;
• and
• the openings in the photoresist and the antireflective coating being formed by solvent processing of the photoresist after the exposing to form the photoresist openings, followed by dry etching all of the antireflective coating exposed through the photoresist openings.

A semiconductor processing method, comprising:

• forming a silicon nitride-comprising layer over a substrate;
• forming an antireflective coating comprising Ge and Se over the silicon nitride-comprising layer;
• forming photoresist over the antireflective coating, the photoresist being different from the antireflective coating;
• exposing the photoresist to actinic radiation effective to pattern the photoresist to form photoresist patterns over the antireflective coating, the antireflective coating reducing reflection of actinic radiation during the exposing than would otherwise occur under identical conditions in the absence of the antireflective coating;
• after the exposing, subtractively etching the silicon nitride-comprising layer through openings in the photoresist and the antireflective coating using the photoresist patterns and the antireflective coating as a mask;
• and
• the openings in the photoresist and the antireflective coating being formed by solvent processing of the photoresist after the exposing to form the photoresist openings, followed by dry etching all of the antireflective coating exposed through the photoresist openings.