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US 7,064,074 B2Granted
Technique for forming contacts for buried doped regions in a semiconductor device
AssigneeAdvanced Micro Devices, Inc.
InventorsRalf van Bentum, Manfred Horstmann
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprises an isolation trench and a contact trench that may contact a buried conductive region. The contact trench comprises insulating sidewall spacers that are formed during the filling of the isolation trench with an insulating material and the subsequent anisotropic etching of the excess material. Thereafter, the contact trench is filled with a conductive material. Thus, the formation of a contact for a buried region may be carried out simultaneously with the formation of a trench isolation structure, thereby minimizing the number of process steps required.
Claims22
A method, comprising:
- forming an isolation trench and a contact trench in a substrate, wherein a width of said isolation trench is less than a width of said contact trench;
- depositing an insulating material over said isolation trench and said contact trench to substantially fill said isolation trench and reduce an effective width of said contact trench;
- removing at least partially said insulating material from a bottom of said contact trench;
- filling in a conductive material into said contact trench to form a contact;
- and
- forming a buried conductive region in said substrate below said contact trench such that said buried region at least partially overlaps with said contact trench, said buried conductive region being conductively coupled to said contact, wherein said buried conductive region is formed prior to the formation of said isolation trench and said contact trench.
3 more elements
A method, comprising:
- forming an isolation trench and a contact trench in a substrate, wherein a width of said isolation trench is less than a width of said contact trench;
- depositing an insulating material over said isolation trench and said contact trench to substantially fill said isolation trench and reduce an effective width of said contact trench;
- removing at least partially said insulating material from a bottom of said contact trench;
- filling in a conductive material into said contact trench to form a contact;
- forming a buried conductive region in said substrate below said contact trench such that said buried region at least partially overlaps with said contact trench, said buried conductive region being conductively coupled to said contact, wherein said buried conductive region is formed prior to the formation of said isolation trench and said contact trench, and wherein said contact trench is positioned so that said effective width at least partially overlaps with said buried conductive region and said contact trench extends into said buried conductive region.
2 more elements
A method, comprising:
- forming an isolation trench and a contact trench in a substrate, wherein a width of said isolation trench is less than a width of said contact trench;
- depositing an insulating material over said isolation trench and said contact trench to substantially fill said isolation trench and reduce an effective width of said contact trench;
- removing at least partially said insulating material from a bottom of said contact trench;
- filling in a conductive material into said contact trench to form a contact;
- forming a buried conductive region in said substrate below said contact trench such that said buried region at least partially overlaps with said contact trench, said buried conductive region being conductively coupled to said contact, wherein said buried conductive region is formed prior to the formation of said isolation trench and said contact trench, and wherein said contact trench is positioned so that said effective width at least partially overlaps with said buried conductive region;
- and
- implanting a dopant species into said buried region prior to at least partially removing said dielectric material from the bottom of said contact trench.
4 more elements
A method, comprising:
- forming an isolation trench and a contact trench in a substrate, wherein a width of said isolation trench is less than a width of said contact trench;
- depositing an insulating material over said isolation trench and said contact trench to substantially fill said isolation trench and reduce an effective width of said contact trench;
- removing at least partially said insulating material from a bottom of said contact trench;
- filling in a conductive material into said contact trench to form a contact;
- forming a buried conductive region in said substrate below said contact trench such that said buried region at least partially overlaps with said contact trench, said buried conductive region being conductively coupled to said contact, wherein said buried conductive region is formed prior to the formation of said isolation trench and said contact trench, and wherein said contact trench is positioned so that said effective width at least partially overlaps with said buried conductive region;
- and
- implanting a dopant species into said buried region after at least partially removing said dielectric material from the bottom of said contact trench.
4 more elements
Dependencies are inferred from the claim text.