Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process
AssigneeTokyo Electron Limited
InventorsWilliam H. Mullee, Marc de Leeuwe, Glenn A. Roberson, Jr., Bentley J. Palmer
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Abstract
A method of post chemical mechanical polishing (CMP) cleaning to remove a CMP residue from a surface of an object is disclosed. The object is placed within a pressure chamber. The pressure chamber is pressurized. A supercritical carbon dioxide process is performed to remove a residual CMP residue from the surface of the object. The pressure chamber is vented.
Claims20
A method of post chemical mechanical polishing (CMP) cleaning to remove a CMP residue from a surface of an object comprising the steps of:
- a. performing a rinse process to remove at least a portion of the CMP residue from the surface of the object;
- b. placing the object within a pressure chamber;
- c. pressurizing the pressure chamber;
- d. performing a supercritical carbon dioxide process to remove a residual CMP residue from the surface of the object, wherein performing a supercritical carbon dioxide process comprises:
- i. introducing a cleaning fluid;
- ii. pressurizing the pressure chamber with carbon dioxide such that the pressure chamber is at least at a supercritical pressure;
- and
- iii. recirculating the cleaning fluid within the pressure chamber;
- e. venting the pressure chamber;
- and
- f. performing a washing process including at least one of immersion baths, megasonic baths, mechanical rollers, mechanical brush scrubbers and double-sided scrubbers, after the step of venting the pressure chamber.
A method of post chemical mechanical polishing (CMP) cleaning to remove a CMP residue from a surface of an object comprising the steps of:
- a. placing the object within a pressure chamber;
- b. pressurizing the pressure chamber;
- c. performing a liquid carbon dioxide process to remove a residual CMP residue from the surface of the object, wherein performing a liquid carbon dioxide process to remove a residual CMP residue from the surface of the object comprises:
- i. introducing a cleaning fluid;
- ii. pressurizing the pressure chamber with carbon dioxide;
- and
- iii. recirculating the cleaning fluid within the pressure chamber;
- d. venting the pressure chamber;
- and
- e. performing a rinse process, after the step of venting the pressure chamber.
Dependencies are inferred from the claim text.