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US 7,064,066 B1Granted
Method for making a semiconductor device having a high-k gate dielectric and a titanium carbide gate electrode
AssigneeIntel Corporation
InventorsMatthew V. Metz, Suman Datta, Mark L. Doczy, Jack Kavalieros, Justin K. Brask, Robert S. Chau
Life of this patent
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Abstract
A method for making a titanium carbide layer is described. That method comprises alternately introducing a carbon containing precursor and a titanium containing precursor into a chemical vapor deposition reactor, while a substrate is maintained at a selected temperature. The reactor is operated for a sufficient time, and pulse times are selected for the carbon containing precursor and the titanium containing precursor, to form a titanium carbide layer of a desired thickness and workfunction on the substrate.
Claims36
A method for making a titanium carbide layer comprising:
- alternately introducing a carbon containing precursor and a titanium containing precursor at selected pulse times into a chemical vapor deposition reactor, while a substrate is maintained at a selected temperature;
- wherein the reactor is operated for a sufficient time, and pulse times are selected for the carbon containing precursor and the titanium containing precursor, to form a titanium carbide layer of a desired thickness and workfunction on the substrate;
- wherein, the titanium carbide layer is between about 10 angstroms and about 20 angstroms thick, and is a p-type titanium carbide layer;
- the selected temperature is between about 100° C. and about 250° C.;
- and
- the pulse time for the carbon containing precursor is between about 0.5 seconds and about 1 second.
3 more elements
A method for making a semiconductor device comprising:
- forming a high-k gate dielectric layer on a substrate;
- and
- forming a titanium carbide containing gate electrode on the high-k gate dielectric layer by:
- alternately introducing a carbon containing precursor and a titanium containing precursor at selected pulse times into a chemical vapor deposition reactor, while the substrate is maintained at a temperature that is between about 100° C. and about 700° C.;
- wherein the pulse time for the carbon containing precursor is between about 0.5 seconds and about 20 seconds;
- and
- wherein the reactor is operated for a sufficient time to generate a titanium carbide layer that is between about 10 angstroms and about 250 angstroms thick.
4 more elements
A method for making a semiconductor device comprising:
- forming a dielectric layer on a substrate;
- forming a first trench and a second trench within the dielectric layer;
- forming a high-k gate dielectric layer within the first trench and within the second trench;
- forming an n-type titanium carbide layer on the high-k gate dielectric layer and within the first trench;
- and
- forming a p-type titanium carbide layer on the high-k gate dielectric layer and within the second trench.
3 more elements
A method for making a semiconductor device comprising:
- forming a gate dielectric layer on a semiconductor substrate;
- and
- forming a gate electrode on said gate dielectric layer, wherein said gate electrode is comprised of a titanium carbide layer, wherein said titanium carbide layer is formed by alternately introducing a carbon containing precursor and a titanium containing precursor at selected pulse times into a chemical vapor deposition reactor at a selected temperature, and wherein said carbon containing precursor comprises a compound that is selected from the group consisting of a metal alkyl complex and a metalloid alkyl complex, and said titanium containing precursor comprises a titanium halide.
A method for making a semiconductor device comprising:
- forming a gate dielectric layer on a semiconductor substrate;
- and
- forming a gate electrode on said gate dielectric layer, wherein said gate electrode is comprised of a titanium carbide layer, wherein said titanium carbide layer is formed by alternately introducing a carbon containing precursor and a titanium containing precursor at selected pulse times into a chemical vapor deposition reactor at a selected temperature, and wherein said titanium carbide layer has a p-type workfunction.
A method for making a semiconductor device comprising:
- forming a gate dielectric layer on a semiconductor substrate;
- and
- forming a gate electrode on said gate dielectric layer, wherein said gate electrode is comprised of a titanium carbide layer, wherein said titanium carbide layer is formed by alternately introducing a carbon containing precursor and a titanium containing precursor at selected pulse times into a chemical vapor deposition reactor at a selected temperature, and wherein said titanium carbide layer has a workfunction between about 4.9 eV and about 5.2 eV.
A method for making a semiconductor device comprising:
- forming a gate dielectric layer on a semiconductor substrate;
- and
- forming a gate electrode on said gate dielectric layer, wherein said gate electrode is comprised of a titanium carbide layer, wherein said titanium carbide layer is formed by alternately introducing a carbon containing precursor and a titanium containing precursor at selected pulse times into a chemical vapor deposition reactor at a selected temperature, and wherein said titanium carbide layer has an n-type workfunction.
A method for making a semiconductor device comprising:
- forming a gate dielectric layer on a semiconductor substrate;
- and
- forming a gate electrode on said gate dielectric layer, wherein said gate electrode is comprised of a titanium carbide layer, wherein said titanium carbide layer is formed by alternately introducing a carbon containing precursor and a titanium containing precursor at selected pulse times into a chemical vapor deposition reactor at a selected temperature, and wherein said titanium carbide layer has a workfunction between about 3.9 eV and about 4.3 eV.
A method for making a semiconductor device comprising:
- forming a gate dielectric layer on a semiconductor substrate;
- and
- forming a gate electrode on said gate dielectric layer, wherein said gate electrode is comprised of a titanium carbide layer, wherein said titanium carbide layer is formed by alternately introducing a carbon containing precursor and a titanium containing precursor at selected pulse times into a chemical vapor deposition reactor at a selected temperature, and wherein said titanium carbide layer has a mid-gap workfunction.
A method for making a semiconductor device comprising:
- forming a trench in a dielectric layer;
- and
- forming a gate electrode on a gate dielectric layer in said trench, wherein said gate electrode is comprised of a titanium carbide layer, and wherein said titanium carbide layer is formed by alternately introducing a carbon containing precursor and a titanium containing precursor at selected pulse times into a chemical vapor deposition reactor at a selected temperature.
Dependencies are inferred from the claim text.