Incorporating dopants to enhance the dielectric properties of metal silicates
AssigneeLSI Logic Corporation
InventorsWai Lo, Verne Hornback, Wilbur G. Catabay, Wei-Jen Hsia, Sey-Shing Sun
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Abstract
The present invention provides a method of forming a high-k dielectric layer on a semiconductor wafer. A metal silicate dielectric layer is initially deposited on the wafer. A dopant having dissociable oxygen is introduced into the metal silicate on the wafer. According to one embodiment the metal silicate comprises a group IV metal and the dopant is an oxide of one of an alkaline metal and an alkaline earth metal. According to another embodiment the metal silicate comprises a group III metal.
Claims16
A method of forming a high-k dielectric layer on a semiconductor wafer, the method comprising:
- depositing a dielectric layer including a metal silicate on the wafer wherein the metal silicate layer comprises a metal from the group consisting of Sc, Y, La, Ti, Hf, Nd, Sm, Gd, Fe, Co, Cr, V, Mg, W, Bi, Pb, U, Th, Cu and Yb;
- and
- introducing a dopant having dissociable oxygen into the metal silicate layer.
A method of forming a high-k dielectric layer on a semiconductor wafer, the method comprising:
- depositing a dielectric layer including a metal silicate on the wafer, wherein the metal silicate layer comprises a metal from the group consisting of Al, Mg, W, Bi, Ba, Ta, Pb, U, Th, Cu;
- and
- introducing a dopant having dissociable oxygen into the metal silicate layer.
Dependencies are inferred from the claim text.