Method of forming a multi-layer semiconductor structure having a seamless bonding interface
AssigneeMassachusetts Institute of Technology
InventorsRafael Reif, Andy Fan
Life of this patent
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Abstract
A method of forming a multi-layer semiconductor structure includes providing a first layer of a patterned copper bond film having a first predetermined thickness onto a first surface of a first semiconductor. The method further includes providing a second layer of a patterned copper bond film having a second predetermined thickness onto a first surface of a second semiconductor. The first and second semiconductor structures can be aligned, such that the first and second patterned copper bond films are disposed in proximity. A virtually seamless bond can be formed between the first and second patterned copper bond films to provide the first and second semiconductors as the multi-layer semiconductor structure.
Claims30
A method of forming a multi-layer semiconductor structure, comprising:
- (a) providing, to a first predetermined thickness, a first patterned bond film onto a first surface of a first semiconductor structure;
- (b) providing, to a second predetermined thickness, a second patterned bond film onto a first surface of a second semiconductor structure;
- (c) aligning the first patterned bond film of the first semiconductor structure and the second patterned bond film of the second semiconductor structure;
- and
- (d) forming a bond between the first and second patterned bond films to provide the first and second semiconductor structures as the multi-layer semiconductor structure wherein forming the bond comprises:
- applying a first predetermined force to the first and the second semiconductor structures for a first predetermined time interval;
- heating the first and second semiconductor structures at a first predetermined rate to a predetermined bonding temperature;
- applying a second predetermined force to the first and the second semiconductor structures for a second predetermined time interval while heating the first and second semiconductor structures at the first predetermined rate;
- and
- applying a third predetermined force to the first and second semiconductor structures for a third predetermined time interval after reaching the predetermined bonding temperature.
A method of forming a multi-layer semiconductor structure, comprising:
- (a) retaining a first semiconductor structure to a second semiconductor structure such that the first and second semiconductor structures are separated by a predetermined distance;
- (b) disposing the first semiconductor structure to a second semiconductor structure in a bonding chamber;
- (c) purging undesirable impurities from the bonding chamber;
- (d) applying a first predetermined force to the first and the second semiconductor structures for a first predetermined time interval;
- (e) applying a second predetermined force to the first and the second semiconductor structures for a second predetermined time interval while heating the first and second semiconductor structures at a first predetermined rate;
- and
- (f) applying a third predetermined force to the first and second semiconductor structures for a third predetermined time interval.
Dependencies are inferred from the claim text.