Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device comprising the steps of:

• forming over a semiconductor substrate a first dummy electrode and a second dummy electrode, the first dummy electrode and the second dummy electrode being formed of a material-to-be-substituted which is substitutable with a material containing a metal;
• forming a protection film on the second dummy electrode;
• forming a first metal film of a first metal material on the first dummy electrode and the protection film;
• conducting a thermal treatment at a first temperature to substitute the first dummy electrode with a first electrode of the first metal material or a compound of the first metal material;
• removing the protection film;
• forming a second metal film of a second metal material on the second dummy electrode;
• and
• conducting a thermal treatment at a second temperature, which is lower than the first temperature and at which an interdiffusion of constituent materials between the first electrode and the second metal film does not take place, to substitute the second dummy electrode with a second electrode of the second metal material or a compound of the second metal material.

A method for fabricating a semiconductor device comprising the steps of:

• forming over a semiconductor substrate a first dummy electrode and a second dummy electrode, the first dummy electrode and the second dummy electrode being formed of a material-to-be-substituted which is substitutable with a material containing a metal;
• removing the first dummy electrode;
• forming a conducting film of a first metal material or a compound of the first metal material in a region where the first dummy electrode has been removed to form a first electrode of the conducting film;
• forming on the second dummy electrode a second metal film of a second metal material which causes not an interdiffusion of constituent materials with respect to the first electrode;
• and
• conducting a thermal treatment to substitute the second dummy electrode with a second electrode of the second metal material or a compound of the second metal material.

A method for fabricating a semiconductor device comprising the steps of:

• forming over a semiconductor substrate a first dummy electrode and a second dummy electrode, the first dummy electrode and the second dummy electrode being formed of a material-to-be-substituted which is substitutable with a material containing a metal;
• forming a first metal film of a first metal material in a region where the first dummy electrode and the second electrode are formed;
• forming a second metal film of a second metal material in a region where the second dummy electrode is formed;
• and
• conducting a thermal treatment to substitute the first dummy electrode with a first electrode of the first metal material or a compound of the first metal material and substitute the second dummy electrode with a second electrode of an alloy of the first metal material and the second metal material or an compound of the alloy.