Dual-gate transistor device and method of forming a dual-gate transistor device
AssigneeMicron Technology, Inc.
InventorsJohn K. Zahurak, Brent Keeth, Charles H. Dennison
Life of this patent
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Abstract
Embodiments in accordance with the present invention provide methods of forming a dual gated semiconductor-on-insulator (SOI) device. Such methods encompass forming a first transistor structure operatively adjacent a first side of the semiconductor layer of an SOI substrate. Insulator layer material is removed from the second side of the semiconductor layer, between the source/drain contact structures of the first transistor structure and a second transistor structure there formed operatively adjacent the second side of the semiconductor layer and aligned to the first transistor structure.
Claims9
A method of forming a transistor device, comprising:
- providing a layer of insulative material over a substrate material;
- forming a semiconductive layer over the layer of insulative material, the semiconductive layer having a first side disposed against the layer of insulative material and having an opposing second side;
- forming a first contact structure and a second contact structure extending at least partially through the layer of insulative material, a portion of the layer of insulative material being disposed between the first and second contact structures;
- after forming the first and second contact structures, removing the substrate material and removing the portion of the layer of insulative material disposed between the first and second contact structures;
- and
- forming a gate structure disposed on the first side of the semiconductive layer between the first and second contact structures.
A method of forming a dual-gate structure comprising:
- providing a first gate structure disposed over a first side of an insulative material, a second side of the insulative material being against a substrate material;
- forming a first contact structure extending into the insulative material on a first side of the gate structure and a second contact structure extending into the insulative material on a second side of the gate structure, a portion of the insulative material being disposed between the first and second contact structures;
- after forming the first and second contact structures, removing the substrate material;
- removing the portion of insulative material disposed between the first and second contact structures;
- and
- forming a second gate structure vertically aligned with the first gate structure between the first and second contact structures.
Dependencies are inferred from the claim text.