Semiconductor memory and method of producing the same

A method of producing a semiconductor memory, comprising:

• forming an inter-layer insulating film over a semiconductor substrate, the inter-layer insulating film having at least one conductive plug embedded therein, the conductive plug being electrically connected to a diffusion layer formed in the surface of the semiconductor substrate;
• forming a first insulating film on the inter-layer insulating film;
• forming a first dummy insulating film on the first insulating film;
• forming a beam-like insulator on the first dummy insulating film;
• selectively removing the first dummy insulating film and the first insulating film to provide a hole, an outer wall portion of the hole touching the beam-like insulator and a bottom of the hole reaching the conductive plug;
• forming a first conductive film extending from an inner wall of the hole to the bottom thereof, the first conductive film functioning as a lower electrode;
• selectively removing the first dummy insulating film in relation to the beam-like insulator and the first insulating film to have the lower electrode, the beam-like insulator and the first insulating film remaining un-removed;
• forming a dielectric film to cover inner and outer surfaces of the lower electrode;
• and
• forming a second conductive film on the dielectric film, the second conductive film functioning as an upper electrode.