Semiconductor device having shared contact and fabrication method thereof

A method of forming a semiconductor device, comprising:

• forming at least one gate pattern on a substrate;
• forming a low-concentration source/drain region at a substrate located at both sides of the gate pattern through ion-implantation;
• forming a spacer having an etch selectivity with respect to the gate pattern at a side of the gate pattern;
• performing ion-implantation by using the gate pattern and the spacer as ion-implantation masks to form a high-concentration impurity ion-implantation region;
• forming an interlayer insulation layer over the gate pattern at whose sidewall the spacer is formed;
• and
• forming a shared contact hole exposing parts of the top surface of the gate pattern and LDD-type source/drain regions of the substrate adjacent to the gate pattern, and simultaneously etching and removing at least a portion of the spacer together with the interlayer insulation layer at the shared contact hole.