Method for forming self-aligned dual salicide in CMOS technologies

A method of fabricating a complementary metal oxide semiconductor (CMOS) device, said method comprising:

• forming a first well region in a semiconductor substrate for accommodation of a first type semiconductor device;
• forming a second well region in said semiconductor substrate for accommodation of a second type semiconductor device;
• shielding said first type semiconductor device with a mask;
• depositing a first metal layer over said second type semiconductor device;
• performing a first salicide formation on said second type semiconductor device;
• removing said mask;
• depositing a second metal layer over the first and second type semiconductor devices;
• and
• performing a second salicide formation on said first type semiconductor device,
• wherein said first metal layer is formed of different materials than said second metal layer.

A method of fabricating a complementary metal oxide semiconductor (CMOS) device, said method comprising:

• forming a first well region in a semiconductor substrate for accommodation of a first type semiconductor device;
• forming a second well region in said semiconductor substrate for accommodation of a second type semiconductor device;
• shielding said first type semiconductor device with a mask;
• depositing a first metal layer over said second type semiconductor device;
• performing a first salicide formation on said second type semiconductor device;
• removing said mask;
• depositing a second metal layer over the first and second type semiconductor devices;
• forming a cap layer over each of said first metal layer and said second metal layer;
• and
• performing a second salicide formation on said first type semiconductor device,
• wherein said cap layer comprises any of TIN, Ti, and TaN.

A method of forming an integrated circuit on a semiconductor substrate, said method comprising:

• forming each of a first and second type semiconductor device on said semiconductor substrate;
• depositing a first metal layer over said second type semiconductor device;
• performing a first salicide formation on only said second type semiconductor device;
• depositing a second metal layer over both said first and second type semiconductor device;
• and
• performing a second salicide formation on only said first type semiconductor device.