D/A converter circuit, semiconductor device incorporating the D/A converter circuit, and manufacturing method of them

A manufacturing method of a D/A converter circuit, comprising the steps of:

• forming a resistor string which includes a plurality of resistor groups connected in series between reference voltages;
• forming a plurality of resistors which are connected in series to configure each of the resistor groups;
• forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors;
• disposing forming parts of the series-connected resistors of each resistor group within each different laser irradiation area;
• crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with a same laser shot;
• and
• disposing auxiliary resistors so as to be connected in parallel with each resistor group,
• wherein each of the resistors is a thin film element crystallized by linear laser irradiation;
• wherein each of the auxiliary resistors has a same resistance value that is sufficiently smaller than a combined resistance value of the resistor group to which each auxiliary resistor is connected.

A manufacturing method of a D/A converter circuit, comprising the steps of:

• forming a resistor string which includes a plurality of resistors connected in series between reference voltages;
• forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors;
• disposing all forming parts of the resistors configuring the resistor string within a laser irradiation area;
• and
• crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with one laser shot,
• wherein each of the resistors is a thin film element crystallized by linear laser irradiation.

A manufacturing method of a D/A converter circuit, comprising the steps of:

• forming a resistor string which includes a plurality of resistor groups connected in series between reference voltages;
• forming a plurality of resistors which are connected in series to configure each of the resistor groups;
• forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors;
• disposing forming parts of the series-connected resistors of each resistor group within each different laser irradiation area;
• crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with one laser shot;
• disposing auxiliary resistors so as to be connected in parallel with each resistor group,
• wherein each of the resistors is a thin film element crystallized by linear laser irradiation;
• wherein each of the auxiliary resistors has a same resistance value that is sufficiently smaller than a combined resistance value of the resistor group to which each auxiliary resistor is connected.

A manufacturing method of a semiconductor device incorporating a D/A converter circuit, comprising the steps of:

• forming a resistor string which includes a plurality of resistors connected in series between reference voltages;
• forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors;
• disposing all forming parts of the resistors configuring the resistor string within a laser irradiation area;
• and
• crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with a same laser shot,
• wherein each of the resistors is a thin film element crystallized by linear laser irradiation.

A manufacturing method of a semiconductor device incorporating a D/A converter circuit, comprising the steps of:

• forming a resistor string which includes a plurality of resistor groups connected in series between reference voltages;
• forming a plurality of resistors so as to be connected in series to configure each of the resistor groups;
• forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors;
• disposing forming parts of the series-connected resistors of each resistor group within each different laser irradiation area;
• crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with a same laser shot;
• and
• disposing auxiliary resistors so as to be connected in parallel with each resistor group,
• wherein each of the resistors is a thin film element crystallized by linear laser irradiation;
• wherein each of the auxiliary resistors has a same resistance value that is sufficiently smaller than a combined resistance value of the resistor group to which each auxiliary resistor is connected.

A manufacturing method of a semiconductor device incorporating a D/A converter circuit, comprising the steps of:

• forming a resistor string which includes a plurality of resistors connected in series between reference voltages;
• forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors;
• disposing all forming parts of the resistors configuring the resistor string within a laser irradiation area;
• and
• crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with one laser shot,
• wherein each of the resistors is a thin film element crystallized by linear laser irradiation.

A manufacturing method of a semiconductor device incorporating a D/A converter circuit, comprising the steps of:

• forming a resistor string which includes a plurality of resistor groups connected in series between reference voltages;
• forming a plurality of switching elements, each of the plurality of switching elements being connected with a connection node of corresponding one of the plurality of resistors;
• disposing forming parts of the series-connected resistors of each resistor group within each different laser irradiation area;
• crystallizing all the forming parts of the resistors which are disposed within the laser irradiation area with one laser shot;
• and
• disposing auxiliary resistors so as to be connected in parallel with each resistor group,
• wherein each of the resistors is a thin film element crystallized by linear laser irradiation;
• wherein each of the auxiliary resistors has a same resistance value that is sufficiently smaller than a combined resistance value of the resistor group to which each auxiliary resistor is connected.