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US 7,064,015 B2Granted
Semiconductor device and manufacturing method of the same
AssigneeNEC Electronics Corporation
InventorKosuke Azuma
Life of this patent
Estimating the term…
Abstract
An interposer has a connection electrode formed on the insulating substrate surface, and a solder bump connects with the connection electrode. The insulating substrate surface is made rough where unevenness is formed, and the connection electrode peelable from the insulating substrate surface in a region with which the solder bump is connected by coating surface low active agent.
Claims6
A manufacturing method of a semiconductor device having:
- a first member having a first electrode;
- and a second member having a second electrode formed on the surface of the insulating substrate and connected with said first electrode, in which
- a manufacturing method of said second member comprises the steps of:
- forming a through hole on a required position of said insulating substrate;
- performing processing to reduce a degree of surface activeness of the surface of a region other than the region of said through hole on the surface of said insulating substrate;
- and
- forming the second electrode formed of a connection electrode with a required pattern in the region including said through hole on a surface of said insulating substrate, in which said second electrode is connected with said insulating substrate in said through hole region, and formed in the state that it is easily peeled off from the surface of said insulating substrate in the region other than the through hole, wherein,
- said performing of processing to reduce the degree of surface activeness of the surface other than the region of said through hole on the surface of said insulating substrate further comprises the steps of:
- making the region on the surface of said insulating substrate become a rough surface to form fine concave portions and convex portions;
- and
- coating surface low active agent on the surface of said insulating substrate to leave the agent in said concave portions, and
- said forming of said second electrode further comprises the steps of:
- plating a conductive material on the surface of said insulating substrate and the inner surface of the through hole to form a plated film;
- and
- forming said plated film in a required pattern to form a through hole electrode and a connection electrode respectively on said through hole inner surface and the surface of said insulating substrate, in which said second electrode is formed in the state that it connects with said through hole electrode in one portion and closely contacts with the insulating substrate at the vertex of the convex portion of said insulating substrate in another portion.
12 more elements
A manufacturing method of a semiconductor device, comprising:
- forming a first member with a first electrode and a second member,
- the second member comprising
- an insulating substrate,
- a second electrode being formed on a surface of the insulating substrate,
- a portion of the second electrode, located along said surface of the insulating substrate, contacting the first electrode, wherein,
- manufacturing said second member comprises the steps of
- forming a through hole at a required position of said insulating substrate;
- performing processing to reduce a degree of surface activeness of the surface of a region spaced apart from said through hole;
- and
- forming, on the surface of the insulating substrate, the second electrode as a connection electrode with second electrode connected with said insulating substrate in said through hole region, and forming said second electrode to be easily peeled off from the surface of said insulating substrate in the region apart from said through hole, wherein
- said performing of processing to reduce the degree of surface activeness of the surface other than the region of said through hole on the surface of said insulating substrate further comprises the steps of:
- making the region on the surface of said insulating substrate become a rough surface to form fine concave portions and convex portions;
- and
- coating surface low active agent on the surface of said insulating substrate to leave the agent in said concave portions, and
- said forming of said second electrode further comprises the steps of:
- plating a conductive material on the surface of said insulating substrate and the inner surface of the through hole to form a plated film;
- and
- forming said plated film in a required pattern to form a through hole electrode and a connection electrode respectively on said through hole inner surface and the surface of said insulating substrate, in which said second electrode is formed in the state that it connects with said through hole electrode in one portion and closely contacts with the insulating substrate at the vertex of the convex portion of said insulating substrate in another portion.
15 more elements
Dependencies are inferred from the claim text.