Semiconductor apparatus and method of manufacturing same

#The present invention relates to a semiconductor apparatus suitable for a multichip module and a method of manufacturing the same.

#In recent years, technologies are known such as mounting a plurality of device tips of CSP (Chip Size Package) structure on a substrate, constituting a semiconductor apparatus called as a multichip module in which a plurality of device chips are flip-chip mounted on an interposer substrate. The technology of flip-chip mounting of device chips on an interposer substrate is disclosed in, for example, Patent Publication No. 2000-164635.

#By the way, in a semiconductor apparatus 100 constituting a multichip module by use of an interposer substrate, as shown in a sectional view of FIG. 5, it is configured in such a way that each device chips 10 and bumps 10a formed on 10 are connected to connection electrodes 2 on an interposer substrate 1. In such a connection configuration, wiring between each device chips are possible to be miniaturized, however, connection terminals T formed at peripheral parts of the interposer substrate 1 are used to connect the semiconductor apparatus 100 to an unillustrated mounting substrate.

#FIG. 1 is a sectional view showing configuration of a semiconductor apparatus 100 in the present embodiment.

#FIGS. 2A to 2B are diagrams explaining manufacturing process of the semiconductor apparatus 100.

#FIGS. 3A to 3B are diagrams explaining manufacturing process of the semiconductor apparatus 100.

#Hereinafter, one embodiment of the present invention will be described with reference to drawings. FIG. 1 is a sectional view showing a configuration of a semiconductor apparatus 100 in accordance with the embodiment. In this diagram, the same numerals are given for the common parts in the conventional embodiment described previously (refer to FIG. 5), and the explanations about them are omitted.

#With respect to the difference between the semiconductor apparatus 100 showing FIG. 1 and the conventional embodiment in FIG. 5 is the configuration in which an embedded electrode 4 penetrating through an interposer substrate 1 is provided, one end thereof is made to be connected to connection electrodes 2 on which device chips 10 are flip-chip mounted, and connected to an unillustrated mounting substrate via a bump electrodes 5 at the other end thereof. According to such a configuration, connection terminals T formed at peripheral parts of the interposer substrate 1 are unnecessary, so that the multichip module can be miniaturized.

#Next, with reference to FIG. 2A to FIG. 2B, FIG. 3A to FIG. 3B and FIG. 4A to FIG. 4C, manufacturing processes of the semiconductor apparatus 100 configured as mentioned above will be described. In the manufacturing processes of the present embodiment, at first, as shown in FIG. 2A, on a surface of a wafer W made of, for example, a silicon substrate which is a base material of an interposer substrate 1, and a resist R is patterned to make openings so as to correspond to contact holes CH described later. Next, etching process is performed on the wafer W with the resist R as a mask. The contact holes CH of 50 to 100 μm depth are formed in a way shown in FIG. 2B. After the contact holes CH are formed, the resist R is removed and an oxide film 3 of 3 to 4 μm film thickness is formed on the surface of the wafer W.