Thin film processing method and thin film processing apparatus including controlling the cooling rate to control the crystal sizes

A thin film processing method of processing a thin film by irradiating an optical beam onto a thin film, wherein:

• one unit of irradiation of the optical beam includes irradiations due to first and second optical pulses onto the thin film,
• the thin film is processed by repeating the one unit of irradiation,
• the first optical pulse and the second optical pulse are supplied from respective, separate first and second optical pulse sources, and
• said thin film is positioned in position relative to said first and second optical pulse sources for each said unit of irradiation,
• wherein the one unit of irradiation includes the first optical pulse irradiation to the thin film and the second optical pulse irradiation to the thin film which substantially starts with a delay to the first optical pulse irradiation,
• the delay is variable in order to control a cooling rate to a predetermined value, and
• wherein the first and second optical pulses control the cooling rate to 1.6×1010° C. or less which prevents the thin film from becoming microcrystalline or amorphous and can satisfactorily grow the crystal size of the thin film.

A thin film processing method of processing a thin film by irradiating an optical beam onto a thin film, wherein:

• one unit of irradiation of the optical beam includes irradiations due to first and second optical pulses onto the thin film,
• the thin film is processed by repeating the one unit of irradiation,
• the first optical pulse and the second optical pulse are supplied from respective, separate first and second optical pulse sources, and
• said thin film is positioned in position relative to said first and second optical pulse sources for each said unit of irradiation,
• wherein the one unit of irradiation includes the first optical pulse irradiation to the thin film and the second optical pulse irradiation to the thin film which substantially starts simultaneously with the irradiation of the first pulse, and
• wherein the first and second optical pulses control a cooling rate to 1.6×1010° C. or less which prevents the thin film from becoming microcrystalline or amorphous and can satisfactorily grow the crystal size of the thin film.