Image sensor having photo diode and method for manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorYi-tae Kim
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Abstract
An image sensor having a photo diode with improved sensitivity, junction leakage and electron capacity, and a method for manufacturing the image sensor, are provided. The provided image sensor includes a semiconductor substrate and a p-type photo diode region formed on a selected region of the semiconductor substrate. A first n-type photo diode region is formed underneath the p-type photo diode region, contacting an interface of the p-type photo diode region, and a second n-type photo diode region is formed to surround the first n-type photo diode region. Here, impurities composing the first n-type photo diode region have smaller projection distance and diffusivity than impurities composing the second n-type photo diode region.
Claims10
A method for manufacturing an image sensor having a photo diode, comprising:
- forming a transfer gate and a reset gate on predetermined portions of a semiconductor substrate with a specific distance therebetween;
- forming a photoresist pattern for exposing a region at one side of the transfer gate;
- forming a p-type photo diode region by implanting p-type impurities into the exposed semiconductor substrate with a first ion implantation energy;
- forming a first n-type photo diode region by implanting first n-type impurities into a portion below the p-type photo diode region, with a second ion implantation energy;
- forming a second n-type photo diode region by implanting second n-type impurities having greater projection distance and diffusivity than the first n-type impurities into a portion surrounding the first n-type photo diode region, with a third ion implantation energy;
- and
- removing the photoresist pattern.
Dependencies are inferred from the claim text.