Process for producing nitride semiconductor light-emitting device
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsDong Hyun Cho, Masayoshi Koike, Hun Joo Hahm
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Abstract
A process for producing a nitride semiconductor light-emitting device includes the steps of preparing a substrate, growing a p-type nitride semiconductor layer on the substrate by the MOCVD process using hydrazine-based gas as a nitrogen precursor and N2 gas as a carrier gas, forming an active layer on the p-type nitride semiconductor layer, forming an n-type conductive nitride semiconductor layer on the active layer, and forming p- and n-electrodes in electrical connection with the p- and n-type nitride semiconductors, respectively.
Claims18
A process of producing a nitride semiconductor light-emitting device, said process comprising the steps of:
- preparing a substrate;
- growing a p-type nitride semiconductor layer by the MOCVD (Metal Organic Chemical Vapor Deposition) process using hydrazine-based gas as a nitrogen precursor and N2 gas as a carrier gas;
- forming an active layer on the p-type nitride semiconductor layer;
- forming an n-type conductive nitride semiconductor layer on the active layer;
- and
- forming p- and n-electrodes in electrical connection with the p- and n-type nitride semiconductor layers, respectively;
- wherein the hydrazine-based, nitrogen precursor gas used in the step of growing the p-type nitride semiconductor layer is a mixed gas additionally containing NH3 gas, and the amount of the NH3 gas is less than 50% of the total amount of the mixed gas.
A process of producing a nitride semiconductor light-emitting device, said process comprising the steps of:
- preparing an electrically insulative substrate;
- forming a p-type contact layer on the substrate;
- growing a p-type nitride semiconductor layer on the p-type contact layer by MOCVD process using hydrazine-based gas as a nitrogen precursor and N2 gas as a carrier gas;
- forming an active layer on the p-type nitride semiconductor layer;
- forming an n-type conductive nitride semiconductor layer on the active layer;
- mesa etching the n-type nitride semiconductor layer, the active layer and the p-type nitride semiconductor layer to partially remove a portion of them so as to expose a region of the p-type contact layer;
- and
- forming the p- and n-electrodes on the exposed portion of the p-type contact layer and the n-type nitride semiconductor layer, respectively,
- wherein the p-type contact layer is a p-type ZnO layer.
Dependencies are inferred from the claim text.