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US 7,063,995 B2Granted
Nitride semiconductor light emitting device and manufacturing method thereof
AssigneeSharp Kabushiki Kaisha
InventorsToshio Hata, Mayuko Fudeta, Daigaku Kimura
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Abstract
The light emitting device includes a p type nitride semiconductor layer, a light emitting layer and an n type nitride semiconductor layer stacked on an Si (silicon) substrate in this order from the side of the Si substrate. The Si substrate is partially removed to expose a part of the p type nitride semiconductor layer. On the exposed region of the p type nitride semiconductor layer, a p type electrode is formed.
Claims1
A method of manufacturing a nitride semiconductor light emitting device, comprising the steps of:
- stacking a p type nitride semiconductor layer, a light emitting layer and an n type nitride semiconductor layer on an Si substrate in this order to form a stacked body, wherein there is no current blocking structure between the p type nitride semiconductor layer and the Si substrate;
- partially removing said Si substrate;
- exposing a surface of said p type nitride semiconductor layer from the portion where said Si substrate is removed;
- heat-treating the stacked body with said Si substrate partially removed;
- and forming a p type electrode on the exposed surface of said p type nitride semiconductor layer.
2 more elements
Dependencies are inferred from the claim text.