Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and ferromagnetic semiconductor based device

A method for fabricating a ferromagnetic semiconductor comprising the steps of:

• forming a 3 group–5 group compound semiconductor thin film comprising one material ‘A’ selected from the group consisting of Ga, Al and In and one material ‘B’ selected from the group consisting of N and P on a substrate;
• and
• doping one material ‘C’ selected from the group consisting of Mn, Mg, Co, Fe, Ni, Cr and V as a material for substituting the material ‘A’, while forming the compound semiconductor thin film by a plasma-enhanced molecular beam epitaxy,
• wherein the materials ‘A’ and ‘C’ are supplied from an effusion cell and the material ‘B’ is supplied from a plasma source, and wherein the plasma power is 250˜350 W.