Method for fabricating sensor devices having improved switching properties
AssigneeMicron Technology, Inc.
InventorJoel A. Drewes
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Abstract
The invention provides an magnetic memory element having improved switching properties and zero field offset, and a manufacturing method thereof. The element comprises a first magnetic layer overlying a conductive layer and a nonmagnetic layer overlying the first magnetic layer. Next, a second magnetic layer is provided over the nonmagnetic layer, wherein the second magnetic layer comprises an antiferromagnetic layer overlying a ferromagnetic free layer to apply a small bias to the ferromagnetic free layer. Then, the first magnetic, nonmagnetic and second magnetic layers are patterned to form the memory element.
Claims18
A method of fabricating a memory element comprising the steps of:
- forming a first pinned magnetic structure over a conductive layer;
- forming a nonmagnetic layer over said first pinned magnetic structure;
- forming a second free magnetic structure over said nonmagnetic layer, wherein said second free magnetic structure comprises an antiferromagnetic layer overlying a ferromagnetic free layer and applying a non-pinning magnetic bias thereto;
- and
- patterning said first pinned magnetic structure, nonmagnetic layer and second free magnetic structure to form said memory element.
A method of fabricating a memory element comprising the steps of:
- forming a first pinned magnetic structure adjacent a conductive layer;
- forming a nonmagnetic layer adjacent said first pinned magnetic structure on a side opposite the conductive layer;
- forming a second free magnetic structure adjacent said nonmagnetic layer on a side opposite the first pinned magnetic structure, wherein said second free magnetic structure comprises an antiferromagnetic layer adjacent a ferromagnetic free layer and applying a non-pinning magnetic bias thereto;
- and
- patterning said first pinned magnetic structure, nonmagnetic layer and second free magnetic structure to form said memory element.
Dependencies are inferred from the claim text.