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US 7,063,984 B2Granted
Low temperature deposition of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits
AssigneeUnity Semiconductor Corporation
InventorsMakoto Nagashima, Darrell Rinerson, Steve K. Hsia, Larry Matheny
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Abstract
A memory fabrication apparatus includes a pair of targets arranged so as to be spaced apart from one another within a closed vacuum vessel, each target of said pair of targets having a sputtering surface facing the sputtering surface of the other target of said pair of targets; and substrate holder adapted to receive facing target sputtering a CMO material on an electrode.
Claims36
A memory fabrication apparatus comprising:
- a. a pair of targets arranged so as to be spaced apart from one another within a closed vacuum vessel, each target of said pair of targets having a sputtering surface facing the sputtering surface of the other target of said pair of targets;
- and
- b. a substrate holder adapted to receive facing target sputtering a complex metal oxide (CMO) material on an electrode wherein the CMO material is adapted to operate within a cross point memory array and the CMO material is deposited on circuitry.
A memory fabrication apparatus, comprising:
- a. a pair of targets arranged so as to be spaced apart from one another within a closed vacuum vessel, each target of said pair of targets having a sputtering surface facing the sputtering surface of the other target of said pair of targets;
- and
- b. a substrate holder adapted to receive facing target sputtering a complex metal oxide (CMO) material on an electrode;
- wherein a memory resulting from the memory fabrication apparatus switches from a first resistance state to a second resistance state upon application of a first write voltage of a first polarity and reversibly switches from the second resistance state to the first resistance state upon application of a second write voltage of polarity opposite to the first polarity, wherein the CMO material is deposited on circuitry.
1 more element
A semiconductor fabrication process, comprising:
- a. providing at least a pair of facing targets arranged so as to be spaced apart from one another within a closed vacuum vessel, each target of said pair of targets having a sputtering surface facing the sputtering surface of the other target of said pair of targets;
- and
- b. sputtering a CMO memory material on an eletrode, wherein the CMO memory material is adapted to operate within a cross point memory array and the CMO memory material is deposited on circuitry.
A semiconductor fabrication process, comprising:
- a. providing a pair of targets arranged so as to be spaced apart from one another within a closed vacuum vessel, each target of said pair of targets having a sputtering surface facing the sputtering surface of the other target of said pair of targets;
- b. applying an electric power to said pair of targets to cause sputtering from the sputtering surface of each target of said pair of targets;
- c. generating at least a perpendicular magnetic field extending in a direction perpendicular to said sputtering surfaces to confine plasma-in a space between said sputtering surfaces;
- and
- d. face target sputtering a CMO memory material on an eletrode, wherein the CMO memory material is adapted to operation within a cross point memory array and the CMO memory material is deposited on circuitry.
2 more elements
Dependencies are inferred from the claim text.