Negative photoresist compositions for the formation of thick films, photoresist films and methods of forming bumps using the same
AssigneeToyko Ohka Kogyo Co., Ltd.
InventorsKoji Saito, Kouichi Misumi, Toshiki Okui, Hiroshi Komano
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Abstract
A negative photoresist composition is used for the formation of thick films and includes (A) a novolak resin, (B) a plasticizer, (C) a crosslinking agent and (D) an acid generator. The composition is applied onto a substrate and thereby yields a photoresist film 5 to 100 μm thick. Likewise, the composition is applied onto a substrate of an electronic part, is patterned, is plated and thereby yields a bump.
Claims8
A negative photoresist composition for the formation of thick films, comprising:
- (A) a novolak resin;
- (B) a plasticizer selected from the group consisting of an alkali-soluble ethyl vinyl ether polymer and an alkali-soluble methyl vinyl ether polymer and having a weight-average molecular weight of 10,000–200,000;
- (C) a crosslinking agent;
- and
- (D) an acid generator;
- wherein the composition is a composition for forming bumps by plating,
- wherein the ingredient (C) is an alkoxymethylated amino resin.
A photoresist film being formed on a substrate by the application of a negative photoresist composition onto the substrate and having a thickness of from 5 to 100 μm,
- wherein the negative photoresist composition is a negative photoresist composition for the formation of thick films, comprising:
- (A) a novolak resin;
- (B) a plasticizer selected from the group consisting of an alkali-soluble ethyl vinyl ether polymer and an alkali-soluble methyl vinyl ether polymer and having a weight-average molecular weight of 10,000–200,000;
- (C) a crosslinking agent;
- and
- (D) an acid generator;
- wherein the composition is a composition for forming bumps by plating, wherein the substrate is a gold-sputtered wafer.
Dependencies are inferred from the claim text.