Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use

A positive photoresist composition comprising:

• a radiation sensitive acid generator;
• and
• a polymer, the polymer comprising:
• a first repeating unit derived from a fluorosulfonamide monomer including one of the following two structures,
• in which M comprises a polymerizable backbone moiety, Z comprises a linking moiety comprising one of —C(O)O—, —C(O)—, —OC(O)—, —O—C(O)—C(O)—O—, R1 represents one of an alkyl, an aryl, a semi- or perfluorinated alkyl, and a semi- or perfluorinated aryl, p and q are 0 or 1, R2 represents one of hydrogen, fluorine, an alkyl group of 1 to 6 carbons, and a semi- or perfluorinated alkyl group of 1 to 6 carbons, n comprises an integer from 1 to 6, and R3 represents one of hydrogen, an alkyl, an aryl, a semi- or perfluorinated alkyl, and a semi- or perfluorinated aryl;
• a second repeating unit including a pendant acid-labile moiety;
• and
• a third repeating unit derived from monomers comprising one of the following structures,
• wherein said polymer comprises:
• about 15 mole % of said first repeating unit;
• about 45 mole % of said second repeating unit;
• and
• about 40 mole % of said third repeating unit.

A positive photoresist composition comprising:

• a radiation sensitive acid generator;
• and
• a polymer, the polymer comprising:
• a first repeating unit derived from a fluorosulfonamide monomer including one of the following two structures,
• in which M comprises a polymerizable backbone moiety, Z comprises a linking moiety comprising one of —C(O)O—, —C(O)—, —OC(O)—, —O—C(O)—C(O)—O—, R1 represents one of an alkyl, an aryl, a semi- or perfluorinated alkyl, and a semi- or perfluorinated aryl, p and q are 0 or 1, R2 represents one of hydrogen, fluorine, an alkyl group of 1 to 6 carbons, and a semi- or perfluorinated alkyl group of 1 to 6 carbons, n comprises an integer from 1 to 6, and R3 represents one of hydrogen, an alkyl, an aryl, a semi- or perfluorinated alkyl, and a semi- or perfluorinated aryl;
• a second repeating unit including a pendant acid-labile moiety;
• and
• a third repeating unit derived from monomers comprising one of the following structures,
• wherein said polymer comprises:
• about 15 mole % of sulfonamide;
• about 40 mole % of lactone;
• and
• about 45 mole % of acid labile group.

A positive photoresist composition comprising:

• a radiation sensitive acid generator;
• and
• a polymer, the polymer comprising:
• a first repeating unit derived from a fluorosulfonamide monomer including one of the following two structures,
• in which M comprises a polymerizable backbone moiety, Z comprises a linking moiety comprising one of —C(O)O—, —C(O)—, —OC(O)—, —O—C(O)—C(O)—O—, R1 represents one of an alkyl, an aryl, a semi- or perfluorinated alkyl, and a semi- or perfluorinated aryl, p and q are 0 or 1, R2 represents one of hydrogen, fluorine, an alkyl group of 1 to 6 carbons, and a semi- or perfluorinated alkyl group of 1 to 6 carbons, n comprises an integer from 1 to 6, and R3 represents one of hydrogen, an alkyl, an aryl, a semi- or perfluorinated alkyl, and a semi- or perfluorinated aryl;
• a second repeating unit including a pendant acid-labile moiety;
• and
• a third repeating unit derived from monomers comprising one of the following structures,
• wherein said polymer comprises about 15 mole % of sulfonamide.