Photomask, in particular alternating phase shift mask, with compensation structure

A method for the production of masks, in particular for the production of alternating phase shift masks, or of chromeless phase shift masks or phase shift masks structured by quartz etching, respectively, comprising at least one product field area with a structure comprising at least two different depths and a compensation structure positioned outside and completely surrounding the at least one product field area, characterized in that the method comprises the step:

• providing of the compensation structure with at least two different depths substantially identical to the two different depths of the at least one product field area such that inner and outer portions of the at least one product field area have homogeneous etching process conditions, and with at least one electrically conducting path-shaped area running through the compensation structure and electrically connected with the product field area.