Nonthermal plasma processor utilizing additive-gas injection and/or gas extraction

A device for processing gases, comprising:

• a gas modification passage defining a length;
• means for supplying a process gas to the gas modification passage at a process gas inlet;
• means for creating nonthermal electrical microdischarges at least partially along the length of the gas modification passage;
• means for injecting an additive gas directly into the gas modification passage independently from the process gas supply means at one or more locations downstream from the process gas inlet and at the location of the nonthermal electrical microdischarges;
• wherein the means for creating nonthermal electrical microdischarges comprises:
• at least one high voltage electrode;
• at least one ground electrode slightly spaced from the high voltage electrode;
• at least one dielectric layer disposed between the high voltage electrode and the ground electrode, the dielectric layer being adjacent to one of:
• the high voltage electrode or the ground electrode;
• and
• wherein the ground electrode comprises the additive gas injecting means;
• wherein the additive gas injecting means is configured to independently and internally deliver the additive gas to a plurality of spaced-apart locations along the gas modification passage such that the additive gas interacts independently with the nonthermal electrical microdischarges generated downstream from the process gas inlet.

A device for processing gases, comprising:

• a cylindrical housing;
• a metal additive gas supply tube disposed coaxially within the cylindrical housing;
• wherein the metal additive gas supply tube comprises a ground electrode;
• a first dielectric tube surrounding the additive gas supply tube;
• a gas modification passage established between the additive gas supply tube and the first dielectric tube;
• a process gas inlet configured to deliver a process gas into the gas modification passage;
• wherein the additive gas supply tube is in direct fluid communication with the gas modification passage and is configured to directly inject an additive gas into the gas modification passage independent from the process gas at a location downstream from the process gas inlet;
• and
• a metal high voltage electrode circumscribing the first dielectric tube, the high voltage electrode being energizable to create nonthermal electrical microdischarges between the high voltage electrode and the additive gas supply tube at least partially along the length of the gas modification passage.

A device for processing gases, comprising:

• a rectangular box-shaped housing;
• a metal, rectangular, plate-shaped additive gas manifold within the housing, the additive gas manifold being formed with at least one additive gas passage;
• a rectangular, dielectric plate slightly spaced from the additive gas manifold;
• a gas modification passage established between the ground electrode and the dielectric layer;
• a process gas inlet in fluid communication with the gas modification passage, the process gas inlet configured to deliver a process gas into the gas modification passage;
• wherein the at least one additive gas passage is in direct fluid communication with the gas modification passage and is configured to inject the additive gas directly into the gas modification passage independently from the process gas at a location downstream from the process gas inlet;
• and
• a metal, rectangular, plate-shaped high voltage electrode adjacent to the dielectric layer, the high voltage electrode being energizable to create nonthermal electrical microdischarges between the high voltage electrode and the additive gas manifold at least partially along the length of the gas modification passage;
• wherein the additive gas manifold comprises a ground electrode;
• said additive gas manifold having a first end forming an additive gas supply inlet at the process gas inlet and a second end extending internal to the high voltage electrode to form an inner wall of the gas modification passage.