Bond coat for silicon based substrates
AssigneeUnited Technologies Corporation
InventorsHarry E. Eaton, Ellen Y. Sun, Stephen Chin
Life of this patent
Estimating the term…
Abstract
A bond layer for use on a silicon based substrate. The bond layer comprises an alloy comprising a refractory metal disilicide/silicon eutectic. The refractory metal disilicide is selected from the group consisting of disilicides of molybdenum, chromium, hafnium, niobium, tantalum, rhenium, titanium, tungsten, uranium, vanadium, yttrium and mixtures thereof. The refractory metal disilicide/silicon eutectic has a melting point of greater than 1300° C.
Claims14
An article comprising a silicon based substrate, at least one environmental barrier layer selected from the group consisting essentially of an alkaline earth aluminosilicate based on barium and strontium, and yttrium silicate, and a bond layer between the substrate and the environmental barrier layer, the bond layer comprises an alloy comprising a refractory metal disilicide/silicon eutectic.
Dependencies are inferred from the claim text.