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US 7,058,096 B2Granted
Widely wavelength tunable integrated semiconductor device and method for widely wavelength tuning semiconductor devices
AssigneeInteruniversitair Microelektronica Centrum (IMEC) vzw
InventorsGert Sarlet, Jens Buus, Roel Baets
Life of this patent
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Abstract
Alternative laser structures, which have potentially the same tuning performance as (S)SG-DBR and GCSR lasers, and a fabrication process which is similar to that of the (S)SG-DBR laser, are presented. The advantage of these structures is that the output power does not pass through a long passive region.
Claims14
A widely tunable laser apparatus comprising:
- a substrate comprising a semiconductor material;
- at least two resonator sections formed on the substrate, wherein each of the at least two resonator sections comprise one of a transmission filter and a reflector;
- and
- a two-sided active radiation-generating section formed on the substrate, the at least two resonator sections being coupled with a single side of the two-sided active section,
- wherein each of the at least two resonator sections comprises a waveguide system, each waveguide system operatively having spaced resonant maxima points, so as to provide one of a maximum transmittance and a maximum reflectance when subjected to energy of a frequency corresponding with one of the resonant maxima points, and
- wherein at least two spacings of the plurality of resonant maxima points are differently spaced in the frequency domain for at least two of the resonant sections.
3 more elements
Dependencies are inferred from the claim text.