Method and system for temperature compensation for memory cells with temperature-dependent behavior

A system for temperature compensation for a memory cell with temperature-dependent behavior, the system comprising:

• a first temperature-dependent reference voltage source operative to generate a first temperature-dependent reference voltage comprising a negative temperature coefficient;
• a second temperature-dependent reference voltage source operative to generate a second temperature-dependent reference voltage comprising a positive temperature coefficient;
• a wordline voltage regulator operative to generate a wordline voltage from one of the first and second temperature-dependent reference voltages;
• a bitline voltage regulator operative to generate a bitline voltage from the other of the first and second temperature-dependent reference voltages;
• and
• a memory cell coupled with the wordline and bitline voltage regulators.

A system for sensing a memory cell comprising temperature-dependent behavior, the system comprising:

• a memory cell comprising temperature-dependent behavior;
• a current sensing amplifier coupled with the memory cell;
• and
• a temperature-dependent reference current source cells coupled with the current sensing amplifier, wherein the temperature-dependent reference current source comprises a plurality of memory cells that have the same temperature-dependent behavior as the memory cell, wherein each of the plurality of memory cells generates a current when a voltage is applied to the plurality of memory cells, and wherein the temperature-dependent reference current source generates a current reference from an average of the currents generated by the plurality of memory cells;
• wherein the current sensing amplifier compares the current reference to current sensed back from the memory cell during a read operation to determine whether the memory cell is programmed.

A system for sensing a memory cell comprising temperature-dependent behavior, the system comprising:

• a memory cell comprising temperature-dependent behavior;
• a current sensing amplifier coupled with the memory cell;
• a temperature-dependent reference current source coupled with the current sensing amplifier, the temperature-dependent reference current source operative to generate a temperature-dependent reference current comprising a positive temperature coefficient;
• wherein the current sensing amplifier compares the temperature-dependent reference current to current sensed back from the memory cell during a read operation to determine whether the memory cell is programmed;
• a second temperature-dependent current source, the second temperature-dependent current source operative to generate a reference current with a negative temperature coefficient;
• and
• a temperature-independent current source operative to generate a temperature-independent reference current;
• wherein the temperature-dependent reference current source generates the temperature-dependent reference current from the reference current generated by the second temperature-dependent current source and the temperature-independent reference current.